INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS
The results of experimental researches of influence of gamma radiation Со60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted.
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/653 |
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| _version_ | 1849773313835925504 |
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| author | Yu. V. Bogatyrev S. B. Lastovsky S. A. Soroka S. V. Shwedov D. A. Ogorodnikov |
| author_facet | Yu. V. Bogatyrev S. B. Lastovsky S. A. Soroka S. V. Shwedov D. A. Ogorodnikov |
| author_sort | Yu. V. Bogatyrev |
| collection | DOAJ |
| description | The results of experimental researches of influence of gamma radiation Со60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted. |
| format | Article |
| id | doaj-art-ca4ebfbaf3734677afa75e19dbc2f1ec |
| institution | DOAJ |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-ca4ebfbaf3734677afa75e19dbc2f1ec2025-08-20T03:02:06ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01037580652INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORSYu. V. Bogatyrev0S. B. Lastovsky1S. A. Soroka2S. V. Shwedov3D. A. Ogorodnikov4Научно-практический центр НАН Беларуси по материаловедениюНаучно-практический центр НАН Беларуси по материаловедениюНТЦ «Белмикросистемы» ОАО «Интеграл»НТЦ «Белмикросистемы» ОАО «Интеграл»Научно-практический центр НАН Беларуси по материаловедениюThe results of experimental researches of influence of gamma radiation Со60 on test MOS/SOI transistors with different constructive-technologic features and electrical modes are submitted.https://doklady.bsuir.by/jour/article/view/653mos/soi transistorgamma radiationradiation resistance |
| spellingShingle | Yu. V. Bogatyrev S. B. Lastovsky S. A. Soroka S. V. Shwedov D. A. Ogorodnikov INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki mos/soi transistor gamma radiation radiation resistance |
| title | INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS |
| title_full | INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS |
| title_fullStr | INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS |
| title_full_unstemmed | INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS |
| title_short | INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS |
| title_sort | influence of gamma radiation on mos soi transistors |
| topic | mos/soi transistor gamma radiation radiation resistance |
| url | https://doklady.bsuir.by/jour/article/view/653 |
| work_keys_str_mv | AT yuvbogatyrev influenceofgammaradiationonmossoitransistors AT sblastovsky influenceofgammaradiationonmossoitransistors AT sasoroka influenceofgammaradiationonmossoitransistors AT svshwedov influenceofgammaradiationonmossoitransistors AT daogorodnikov influenceofgammaradiationonmossoitransistors |