First-Principles Study on the High Spin-Polarized Ferromagnetic Semiconductor of Vanadium-Nitride Monolayer and Its Heterostructures
The newly discovered 2D spin-gapless magnetic materials, which provide new opportunities for combining spin polarization and the quantum anomalous Hall effect, provide a new method for the design and application of memory and nanoscale devices. However, a low Curie temperature (<i>T<sub>...
Saved in:
| Main Authors: | Guiyuan Hua, Xuming Wu, Xujin Ge, Tianhang Zhou, Zhibin Shao |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
|
| Series: | Molecules |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1420-3049/30/10/2156 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Non-Bosonic Damping of Spin Waves in van der Waals Ferromagnetic Monolayers
by: Michael G. Cottam, et al.
Published: (2025-05-01) -
Multifunctionality of Single‐Atom‐Thick 2D Magnetic Atoms in Nanolaminated M2AX: Toward Permanent Magnets and Topological Properties
by: Chen Shen, et al.
Published: (2025-06-01) -
Spin Current Generation at the Hybrid Ferromagnetic Metal/Organic Semiconductor Interface as Revealed by Multiple Magnetic Resonance Techniques
by: Kohei Takaishi, et al.
Published: (2025-02-01) -
Highly Efficient Spin‐Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature
by: Kewen Zhang, et al.
Published: (2025-07-01) -
Layer-polarized anomalous Hall effect in the MnBi2Te4/In2Se3 (In2Te3) heterostructures
by: Hong Xu, et al.
Published: (2024-09-01)