Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs

Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs

In this work, we investigate the field and temperature dependence of the electron mobility in aluminum-gallium-nitride/gallium-nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) realized on GaN-on-silicon (Si) substrates. For this purpose we employ an extraction method to eliminate paras...

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Bibliographic Details
Main Authors: Ran Zhou, D. J. Gravesteijn, R. J. E. Hueting
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
High electron mobility transistors
two-dimensional electron gas
gallium-nitride
mobility
interface states
dislocations
Online Access:https://ieeexplore.ieee.org/document/11031174/
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