Zhou, R., Gravesteijn, D. J., & Hueting, R. J. E. Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs. IEEE.
Chicago Style (17th ed.) CitationZhou, Ran, D. J. Gravesteijn, and R. J. E. Hueting. Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs. IEEE.
MLA (9th ed.) CitationZhou, Ran, et al. Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs. IEEE.
Warning: These citations may not always be 100% accurate.