Parity-independent Kondo effect of correlated electrons in electrostatically defined ZnO quantum dots
Abstract Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present a demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Throu...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-11-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-53890-2 |
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| author | Kosuke Noro Yusuke Kozuka Kazuma Matsumura Takeshi Kumasaka Yoshihiro Fujiwara Atsushi Tsukazaki Masashi Kawasaki Tomohiro Otsuka |
| author_facet | Kosuke Noro Yusuke Kozuka Kazuma Matsumura Takeshi Kumasaka Yoshihiro Fujiwara Atsushi Tsukazaki Masashi Kawasaki Tomohiro Otsuka |
| author_sort | Kosuke Noro |
| collection | DOAJ |
| description | Abstract Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present a demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of the even-odd electron number parity, which contrasts with the typical behavior of the Kondo effect in GaAs. By analyzing temperature and magnetic field dependences, we find that the absence of the even-odd parity in the Kondo effect is not straightforwardly interpreted by the considerations developed for conventional semiconductors. We propose that, based on the unique parameters of ZnO, electron correlation likely plays a fundamental role in this observation. Our study not only clarifies the physics of correlated electrons in the quantum dot but also holds promise for applications in quantum devices, leveraging the unique features of ZnO. |
| format | Article |
| id | doaj-art-c9b64aa82fa641d6891ac9a1bf8f1902 |
| institution | OA Journals |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-c9b64aa82fa641d6891ac9a1bf8f19022025-08-20T02:13:39ZengNature PortfolioNature Communications2041-17232024-11-011511810.1038/s41467-024-53890-2Parity-independent Kondo effect of correlated electrons in electrostatically defined ZnO quantum dotsKosuke Noro0Yusuke Kozuka1Kazuma Matsumura2Takeshi Kumasaka3Yoshihiro Fujiwara4Atsushi Tsukazaki5Masashi Kawasaki6Tomohiro Otsuka7Research Institute of Electrical Communication, Tohoku UniversityResearch Center for Materials Nanoarchitectonics (MANA), National Institute for Material Science (NIMS)Research Institute of Electrical Communication, Tohoku UniversityResearch Institute of Electrical Communication, Tohoku UniversityResearch Institute of Electrical Communication, Tohoku UniversityInstitute for Materials Research, Tohoku UniversityDepartment of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of TokyoResearch Institute of Electrical Communication, Tohoku UniversityAbstract Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present a demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of the even-odd electron number parity, which contrasts with the typical behavior of the Kondo effect in GaAs. By analyzing temperature and magnetic field dependences, we find that the absence of the even-odd parity in the Kondo effect is not straightforwardly interpreted by the considerations developed for conventional semiconductors. We propose that, based on the unique parameters of ZnO, electron correlation likely plays a fundamental role in this observation. Our study not only clarifies the physics of correlated electrons in the quantum dot but also holds promise for applications in quantum devices, leveraging the unique features of ZnO.https://doi.org/10.1038/s41467-024-53890-2 |
| spellingShingle | Kosuke Noro Yusuke Kozuka Kazuma Matsumura Takeshi Kumasaka Yoshihiro Fujiwara Atsushi Tsukazaki Masashi Kawasaki Tomohiro Otsuka Parity-independent Kondo effect of correlated electrons in electrostatically defined ZnO quantum dots Nature Communications |
| title | Parity-independent Kondo effect of correlated electrons in electrostatically defined ZnO quantum dots |
| title_full | Parity-independent Kondo effect of correlated electrons in electrostatically defined ZnO quantum dots |
| title_fullStr | Parity-independent Kondo effect of correlated electrons in electrostatically defined ZnO quantum dots |
| title_full_unstemmed | Parity-independent Kondo effect of correlated electrons in electrostatically defined ZnO quantum dots |
| title_short | Parity-independent Kondo effect of correlated electrons in electrostatically defined ZnO quantum dots |
| title_sort | parity independent kondo effect of correlated electrons in electrostatically defined zno quantum dots |
| url | https://doi.org/10.1038/s41467-024-53890-2 |
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