Structural, optical, and electronic properties of MgxZn1-xO (0 ≤ x ≤ 0.38) films pseudomorphically grown on Zn-polar ZnO substratesMDR
ZnO is a typical oxide semiconductor with a wide direct band gap of 3.37 eV and offers a variety of possibilities for optical and electronic applications. Alloying with Mg into the Zn site increases the band gap, enabling band engineering. In this study, we have performed comprehensive characterizat...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-06-01
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| Series: | Materials Today Quantum |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2950257825000149 |
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