Investigating Quantum Confinement and Enhanced Luminescence in Nanoporous Silicon: A Photoelectrochemical Etching Approach Using Multispectral Laser Irradiation

This study explores electrochemical etching to form porous silicon (PS), which has diverse biomedical and energy applications. Our objective is to gain new insights and drive significant scientific and technological advancements. Specifically, we study the effect of electrochemical etching of P-type...

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Main Authors: Chao-Ching Chiang, Philip Nathaniel Immanuel
Format: Article
Language:English
Published: MDPI AG 2024-11-01
Series:Optics
Subjects:
Online Access:https://www.mdpi.com/2673-3269/5/4/35
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author Chao-Ching Chiang
Philip Nathaniel Immanuel
author_facet Chao-Ching Chiang
Philip Nathaniel Immanuel
author_sort Chao-Ching Chiang
collection DOAJ
description This study explores electrochemical etching to form porous silicon (PS), which has diverse biomedical and energy applications. Our objective is to gain new insights and drive significant scientific and technological advancements. Specifically, we study the effect of electrochemical etching of P-type silicon using laser irradiation in a hydrofluoric acid (HF) solution. The formation of the nanoscale PS structure can be successfully controlled by incorporating laser irradiation into the electrochemical etching process. The wavelength and power of the laser influence the formation of nanoporous silicon (NPS) on the surface during the electrochemical etching process. The luminous flux is monitored with the help of a customized integrating sphere system and an LED-based excitation source to find the light flux values distributed across the P-type nanolayer PS wafers. Analysis of the NPS and luminescence characteristics shows that the laser bandwidth controls the band gap energy absorption (BEA) phenomenon during the electrothermal reaction. It is demonstrated that formation of the NPS layer can be controlled in this combined laser irradiation and electrochemical etching technique by adjusting the range of the laser wavelength. This also allows for further precise control of the numerical trend of the luminous flux.
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spelling doaj-art-c8cf15beb4474443b8418cdc4ada991b2025-08-20T02:50:42ZengMDPI AGOptics2673-32692024-11-015446547610.3390/opt5040035Investigating Quantum Confinement and Enhanced Luminescence in Nanoporous Silicon: A Photoelectrochemical Etching Approach Using Multispectral Laser IrradiationChao-Ching Chiang0Philip Nathaniel Immanuel1Department of Mechanical Engineering, Asia Eastern University of Science and Technology, New Taipei City 220303, TaiwanDepartment of Chemical Engineering, Ariel University, Ariel 407000, IsraelThis study explores electrochemical etching to form porous silicon (PS), which has diverse biomedical and energy applications. Our objective is to gain new insights and drive significant scientific and technological advancements. Specifically, we study the effect of electrochemical etching of P-type silicon using laser irradiation in a hydrofluoric acid (HF) solution. The formation of the nanoscale PS structure can be successfully controlled by incorporating laser irradiation into the electrochemical etching process. The wavelength and power of the laser influence the formation of nanoporous silicon (NPS) on the surface during the electrochemical etching process. The luminous flux is monitored with the help of a customized integrating sphere system and an LED-based excitation source to find the light flux values distributed across the P-type nanolayer PS wafers. Analysis of the NPS and luminescence characteristics shows that the laser bandwidth controls the band gap energy absorption (BEA) phenomenon during the electrothermal reaction. It is demonstrated that formation of the NPS layer can be controlled in this combined laser irradiation and electrochemical etching technique by adjusting the range of the laser wavelength. This also allows for further precise control of the numerical trend of the luminous flux.https://www.mdpi.com/2673-3269/5/4/35nanoporous siliconband gap energy absorptionluminous flux
spellingShingle Chao-Ching Chiang
Philip Nathaniel Immanuel
Investigating Quantum Confinement and Enhanced Luminescence in Nanoporous Silicon: A Photoelectrochemical Etching Approach Using Multispectral Laser Irradiation
Optics
nanoporous silicon
band gap energy absorption
luminous flux
title Investigating Quantum Confinement and Enhanced Luminescence in Nanoporous Silicon: A Photoelectrochemical Etching Approach Using Multispectral Laser Irradiation
title_full Investigating Quantum Confinement and Enhanced Luminescence in Nanoporous Silicon: A Photoelectrochemical Etching Approach Using Multispectral Laser Irradiation
title_fullStr Investigating Quantum Confinement and Enhanced Luminescence in Nanoporous Silicon: A Photoelectrochemical Etching Approach Using Multispectral Laser Irradiation
title_full_unstemmed Investigating Quantum Confinement and Enhanced Luminescence in Nanoporous Silicon: A Photoelectrochemical Etching Approach Using Multispectral Laser Irradiation
title_short Investigating Quantum Confinement and Enhanced Luminescence in Nanoporous Silicon: A Photoelectrochemical Etching Approach Using Multispectral Laser Irradiation
title_sort investigating quantum confinement and enhanced luminescence in nanoporous silicon a photoelectrochemical etching approach using multispectral laser irradiation
topic nanoporous silicon
band gap energy absorption
luminous flux
url https://www.mdpi.com/2673-3269/5/4/35
work_keys_str_mv AT chaochingchiang investigatingquantumconfinementandenhancedluminescenceinnanoporoussiliconaphotoelectrochemicaletchingapproachusingmultispectrallaserirradiation
AT philipnathanielimmanuel investigatingquantumconfinementandenhancedluminescenceinnanoporoussiliconaphotoelectrochemicaletchingapproachusingmultispectrallaserirradiation