Stability of GaN HEMT Device Under Static and Dynamic Gate Stress
In this work, we investigated the stability of a <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10422723/ |
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| author | Linfei Gao Ze Zhong Qiyan Zhang Xiaohua Li Xinbo Xiong Shaojun Chen Longkou Chen Huaibao Yan Anle Zhang Jiajun Han Wenrong Zhuang Feng Qiu Hsien-Chin Chiu Shuangwu Huang Xinke Liu |
| author_facet | Linfei Gao Ze Zhong Qiyan Zhang Xiaohua Li Xinbo Xiong Shaojun Chen Longkou Chen Huaibao Yan Anle Zhang Jiajun Han Wenrong Zhuang Feng Qiu Hsien-Chin Chiu Shuangwu Huang Xinke Liu |
| author_sort | Linfei Gao |
| collection | DOAJ |
| description | In this work, we investigated the stability of a <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate stability by using capacitance to release the hole into the <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN layer to mitigate the threshold voltage shift. Through pulse I-V measurement and positive bias temperature instability (PBTI) test, the carrier transporting behavior in the gate region achieved dynamic equilibrium at 5 V gate bias. The positive gate shift <inline-formula> <tex-math notation="LaTeX">$(\Delta V_{\mathrm{ TH}})$ </tex-math></inline-formula> of 0.4 V is observed with increasing voltage from 3 V to 8 V; <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ TH}}$ </tex-math></inline-formula> initially drops smoothly after release stresses by external capacitance discharge. Finally, integrated passive components and <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate HEMT circuit are recommended to mitigate the <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{ TH}}$ </tex-math></inline-formula> instability for E-mode HEMT. |
| format | Article |
| id | doaj-art-c8b7c641924545828805336a5265d962 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-c8b7c641924545828805336a5265d9622025-01-28T00:00:30ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011216516910.1109/JEDS.2024.336204810422723Stability of GaN HEMT Device Under Static and Dynamic Gate StressLinfei Gao0Ze Zhong1https://orcid.org/0000-0002-8784-2969Qiyan Zhang2https://orcid.org/0000-0002-0516-6208Xiaohua Li3Xinbo Xiong4Shaojun Chen5Longkou Chen6Huaibao Yan7Anle Zhang8Jiajun Han9Wenrong Zhuang10Feng Qiu11https://orcid.org/0000-0002-6666-7559Hsien-Chin Chiu12https://orcid.org/0000-0003-1068-5798Shuangwu Huang13https://orcid.org/0000-0002-1980-4979Xinke Liu14https://orcid.org/0000-0002-3472-5945College of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaShenzhen Baseus Technology Company Ltd., Shenzhen, ChinaJiangxi Yuhongjin Material Technology Company Ltd., Fuzhou, ChinaJiangxi Yuhongjin Material Technology Company Ltd., Fuzhou, ChinaDongguan Sino Nitride Semiconductor Company Ltd., Dongguan, ChinaDongguan Sino Nitride Semiconductor Company Ltd., Dongguan, ChinaGensol (Shenzhen) Tech. Innovation Center Company Ltd., Shenzhen, ChinaDepartment of Electronic Engineering, Chang Gung University, Taoyuan, TaiwanCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaCollege of Materials Science and Engineering, Shenzhen University, Shenzhen, ChinaIn this work, we investigated the stability of a <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate stability by using capacitance to release the hole into the <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN layer to mitigate the threshold voltage shift. Through pulse I-V measurement and positive bias temperature instability (PBTI) test, the carrier transporting behavior in the gate region achieved dynamic equilibrium at 5 V gate bias. The positive gate shift <inline-formula> <tex-math notation="LaTeX">$(\Delta V_{\mathrm{ TH}})$ </tex-math></inline-formula> of 0.4 V is observed with increasing voltage from 3 V to 8 V; <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ TH}}$ </tex-math></inline-formula> initially drops smoothly after release stresses by external capacitance discharge. Finally, integrated passive components and <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate HEMT circuit are recommended to mitigate the <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{ TH}}$ </tex-math></inline-formula> instability for E-mode HEMT.https://ieeexplore.ieee.org/document/10422723/p-GaN HEMTpulse I-Vpositive bias temperature instability (PBTI)threshold voltageStabilitymechanism |
| spellingShingle | Linfei Gao Ze Zhong Qiyan Zhang Xiaohua Li Xinbo Xiong Shaojun Chen Longkou Chen Huaibao Yan Anle Zhang Jiajun Han Wenrong Zhuang Feng Qiu Hsien-Chin Chiu Shuangwu Huang Xinke Liu Stability of GaN HEMT Device Under Static and Dynamic Gate Stress IEEE Journal of the Electron Devices Society p-GaN HEMT pulse I-V positive bias temperature instability (PBTI) threshold voltage Stability mechanism |
| title | Stability of GaN HEMT Device Under Static and Dynamic Gate Stress |
| title_full | Stability of GaN HEMT Device Under Static and Dynamic Gate Stress |
| title_fullStr | Stability of GaN HEMT Device Under Static and Dynamic Gate Stress |
| title_full_unstemmed | Stability of GaN HEMT Device Under Static and Dynamic Gate Stress |
| title_short | Stability of GaN HEMT Device Under Static and Dynamic Gate Stress |
| title_sort | stability of gan hemt device under static and dynamic gate stress |
| topic | p-GaN HEMT pulse I-V positive bias temperature instability (PBTI) threshold voltage Stability mechanism |
| url | https://ieeexplore.ieee.org/document/10422723/ |
| work_keys_str_mv | AT linfeigao stabilityofganhemtdeviceunderstaticanddynamicgatestress AT zezhong stabilityofganhemtdeviceunderstaticanddynamicgatestress AT qiyanzhang stabilityofganhemtdeviceunderstaticanddynamicgatestress AT xiaohuali stabilityofganhemtdeviceunderstaticanddynamicgatestress AT xinboxiong stabilityofganhemtdeviceunderstaticanddynamicgatestress AT shaojunchen stabilityofganhemtdeviceunderstaticanddynamicgatestress AT longkouchen stabilityofganhemtdeviceunderstaticanddynamicgatestress AT huaibaoyan stabilityofganhemtdeviceunderstaticanddynamicgatestress AT anlezhang stabilityofganhemtdeviceunderstaticanddynamicgatestress AT jiajunhan stabilityofganhemtdeviceunderstaticanddynamicgatestress AT wenrongzhuang stabilityofganhemtdeviceunderstaticanddynamicgatestress AT fengqiu stabilityofganhemtdeviceunderstaticanddynamicgatestress AT hsienchinchiu stabilityofganhemtdeviceunderstaticanddynamicgatestress AT shuangwuhuang stabilityofganhemtdeviceunderstaticanddynamicgatestress AT xinkeliu stabilityofganhemtdeviceunderstaticanddynamicgatestress |