Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide
The use of silicon carbide is increasing significantly in the fields of research and technology. Topological indices enable data gathering on algebraic graphs and provide a mathematical framework for analyzing the chemical structural characteristics. In this paper, well-known degree-based...
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University of Baghdad, College of Science for Women
2024-01-01
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| Series: | مجلة بغداد للعلوم |
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| Online Access: | https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/8178 |
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| author | Abid Mahboob Muhammad Waheed Rasheed Jalal Hatem Hussein Bayati Iqra Hanif Sajid Mahboob Alam |
| author_facet | Abid Mahboob Muhammad Waheed Rasheed Jalal Hatem Hussein Bayati Iqra Hanif Sajid Mahboob Alam |
| author_sort | Abid Mahboob |
| collection | DOAJ |
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The use of silicon carbide is increasing significantly in the fields of research and technology. Topological indices enable data gathering on algebraic graphs and provide a mathematical framework for analyzing the chemical structural characteristics. In this paper, well-known degree-based topological indices are used to analyze the chemical structures of silicon carbides. To evaluate the features of various chemical or non-chemical networks, a variety of topological indices are defined. In this paper, a new concept related to the degree of the graph called "bi-distance" is introduced, which is used to calculate all the additive as well as multiplicative degree-based indices for the isomer of silicon carbide, Si2C3-1[t, h]. The term "bi-distance" is derived from the concepts of degree and distance in such a way that second distance can be used to calculate degree-based topological indices.
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| format | Article |
| id | doaj-art-c8ac47e70d2c462c933672c814590ba2 |
| institution | Kabale University |
| issn | 2078-8665 2411-7986 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | University of Baghdad, College of Science for Women |
| record_format | Article |
| series | مجلة بغداد للعلوم |
| spelling | doaj-art-c8ac47e70d2c462c933672c814590ba22025-08-20T03:36:06ZengUniversity of Baghdad, College of Science for Womenمجلة بغداد للعلوم2078-86652411-79862024-01-0121110.21123/bsj.2023.8178Bi-Distance Approach to Determine the Topological Invariants of Silicon CarbideAbid Mahboob0Muhammad Waheed Rasheed1Jalal Hatem Hussein Bayati2Iqra Hanif3Sajid Mahboob Alam4Department of Mathematics, Division of Science and Technology, University of Education, Lahore PakistanDepartment of Mathematics, Division of Science and Technology, University of Education, Lahore Pakistan.Department of Mathematics, College of Science for Women, University of Baghdad, Baghdad, Iraq.Department of Mathematics, Division of Science and Technology, University of Education, Lahore Pakistan.Department of Mathematics, Minhaj University Lahore, Pakistan. The use of silicon carbide is increasing significantly in the fields of research and technology. Topological indices enable data gathering on algebraic graphs and provide a mathematical framework for analyzing the chemical structural characteristics. In this paper, well-known degree-based topological indices are used to analyze the chemical structures of silicon carbides. To evaluate the features of various chemical or non-chemical networks, a variety of topological indices are defined. In this paper, a new concept related to the degree of the graph called "bi-distance" is introduced, which is used to calculate all the additive as well as multiplicative degree-based indices for the isomer of silicon carbide, Si2C3-1[t, h]. The term "bi-distance" is derived from the concepts of degree and distance in such a way that second distance can be used to calculate degree-based topological indices. https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/8178Bi-distance edges, Molecular graph, Randic index, Silicon Carbide Si2C3-1[t, h], Topological index, Zagreb index. |
| spellingShingle | Abid Mahboob Muhammad Waheed Rasheed Jalal Hatem Hussein Bayati Iqra Hanif Sajid Mahboob Alam Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide مجلة بغداد للعلوم Bi-distance edges, Molecular graph, Randic index, Silicon Carbide Si2C3-1[t, h], Topological index, Zagreb index. |
| title | Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide |
| title_full | Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide |
| title_fullStr | Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide |
| title_full_unstemmed | Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide |
| title_short | Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide |
| title_sort | bi distance approach to determine the topological invariants of silicon carbide |
| topic | Bi-distance edges, Molecular graph, Randic index, Silicon Carbide Si2C3-1[t, h], Topological index, Zagreb index. |
| url | https://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/8178 |
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