Fast Quantum Gates with Electric Field Pulses and Optical Tweezers in Trapped Ions

We propose a two-qubit phase gate based on trapped ions that uses fast electric field pulses and spin-dependent local traps generated by optical tweezers. The phases are engineered by spin-dependent coherent evolution, interspersed with momentum kicks. We derive a set of commensurability conditions...

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Bibliographic Details
Main Authors: Clara Robalo Pereira, Liam J. Bond, Matteo Mazzanti, Rene Gerritsma, Arghavan Safavi-Naini
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Entropy
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Online Access:https://www.mdpi.com/1099-4300/27/6/595
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Summary:We propose a two-qubit phase gate based on trapped ions that uses fast electric field pulses and spin-dependent local traps generated by optical tweezers. The phases are engineered by spin-dependent coherent evolution, interspersed with momentum kicks. We derive a set of commensurability conditions and expressions for the spin-dependent accumulated phase that, when satisfied, realize the target two-qubit phase gate within tens of microseconds. We study the scalability of our proposal in larger-ion crystals and demonstrate the existence of solutions with up to four ions. Gates in larger crystals should also be possible but will require more commensurability conditions to be fulfilled.
ISSN:1099-4300