Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory
Abstract Ovonic threshold switching (OTS) selectors based on amorphous chalcogenides can revolutionize 3D memory technology owing to their self‐selecting memory (SSM) behavior. However, the complex mechanism governing the memory writing operation limits compositional and device optimization. This st...
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| Format: | Article |
| Language: | English |
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Wiley
2024-11-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202408028 |
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| author | Ha‐Jun Sung Minwoo Choi Zhe Wu Hwasung Chae Sung Heo Youngjae Kang Bonwon Koo Jong‐Bong Park Wooyoung Yang Yongyoung Park Yongnam Ham Kiyeon Yang Chang Seung Lee |
| author_facet | Ha‐Jun Sung Minwoo Choi Zhe Wu Hwasung Chae Sung Heo Youngjae Kang Bonwon Koo Jong‐Bong Park Wooyoung Yang Yongyoung Park Yongnam Ham Kiyeon Yang Chang Seung Lee |
| author_sort | Ha‐Jun Sung |
| collection | DOAJ |
| description | Abstract Ovonic threshold switching (OTS) selectors based on amorphous chalcogenides can revolutionize 3D memory technology owing to their self‐selecting memory (SSM) behavior. However, the complex mechanism governing the memory writing operation limits compositional and device optimization. This study investigates the mechanism behind the polarity‐dependent threshold voltage shift (ΔVTH) through theoretical and experimental analyses. By examining the physical principles of threshold switching and conducting defect state analysis, the ΔVTH as a memory window is confirmed to be attributed to the dynamics of charged defects and their gradient near electrodes, influenced by the nonuniform electric field after threshold switching. This study provides critical insights into the operational mechanism of OTS‐based SSM, known as selector‐only memory, highlighting its advantages for developing high‐density, low‐cost, and energy‐efficient memory technologies in the artificial intelligence era. |
| format | Article |
| id | doaj-art-c7dd65adda154ea9b6fc8eb11864de02 |
| institution | OA Journals |
| issn | 2198-3844 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-c7dd65adda154ea9b6fc8eb11864de022025-08-20T02:27:57ZengWileyAdvanced Science2198-38442024-11-011144n/an/a10.1002/advs.202408028Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting MemoryHa‐Jun Sung0Minwoo Choi1Zhe Wu2Hwasung Chae3Sung Heo4Youngjae Kang5Bonwon Koo6Jong‐Bong Park7Wooyoung Yang8Yongyoung Park9Yongnam Ham10Kiyeon Yang11Chang Seung Lee12Thin Film Technical UnitSamsung Advanced Institute of TechnologySamsung ElectronicsSuwon‐si 16677 South KoreaThin Film Technical UnitSamsung Advanced Institute of TechnologySamsung ElectronicsSuwon‐si 16677 South KoreaAdvanced Process Development TeamSemiconductor R&D CenterSamsung ElectronicsHwaseong‐si 18448 South KoreaAdvanced Process Development TeamSemiconductor R&D CenterSamsung ElectronicsHwaseong‐si 18448 South KoreaAnalytical Engineering GroupSamsung Advanced Institute of TechnologySamsung ElectronicsSuwon‐si 16677 South KoreaThin Film Technical UnitSamsung Advanced Institute of TechnologySamsung ElectronicsSuwon‐si 16677 South KoreaThin Film Technical UnitSamsung Advanced Institute of TechnologySamsung ElectronicsSuwon‐si 16677 South KoreaThin Film Technical UnitSamsung Advanced Institute of TechnologySamsung ElectronicsSuwon‐si 16677 South KoreaThin Film Technical UnitSamsung Advanced Institute of TechnologySamsung ElectronicsSuwon‐si 16677 South KoreaThin Film Technical UnitSamsung Advanced Institute of TechnologySamsung ElectronicsSuwon‐si 16677 South KoreaThin Film Technical UnitSamsung Advanced Institute of TechnologySamsung ElectronicsSuwon‐si 16677 South KoreaThin Film Technical UnitSamsung Advanced Institute of TechnologySamsung ElectronicsSuwon‐si 16677 South KoreaThin Film Technical UnitSamsung Advanced Institute of TechnologySamsung ElectronicsSuwon‐si 16677 South KoreaAbstract Ovonic threshold switching (OTS) selectors based on amorphous chalcogenides can revolutionize 3D memory technology owing to their self‐selecting memory (SSM) behavior. However, the complex mechanism governing the memory writing operation limits compositional and device optimization. This study investigates the mechanism behind the polarity‐dependent threshold voltage shift (ΔVTH) through theoretical and experimental analyses. By examining the physical principles of threshold switching and conducting defect state analysis, the ΔVTH as a memory window is confirmed to be attributed to the dynamics of charged defects and their gradient near electrodes, influenced by the nonuniform electric field after threshold switching. This study provides critical insights into the operational mechanism of OTS‐based SSM, known as selector‐only memory, highlighting its advantages for developing high‐density, low‐cost, and energy‐efficient memory technologies in the artificial intelligence era.https://doi.org/10.1002/advs.202408028amorphous chalcogenidesself‐selecting memoryovonic threshold switching |
| spellingShingle | Ha‐Jun Sung Minwoo Choi Zhe Wu Hwasung Chae Sung Heo Youngjae Kang Bonwon Koo Jong‐Bong Park Wooyoung Yang Yongyoung Park Yongnam Ham Kiyeon Yang Chang Seung Lee Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory Advanced Science amorphous chalcogenides self‐selecting memory ovonic threshold switching |
| title | Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory |
| title_full | Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory |
| title_fullStr | Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory |
| title_full_unstemmed | Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory |
| title_short | Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory |
| title_sort | microscopic origin of polarity dependent vth shift in amorphous chalcogenides for 3d self selecting memory |
| topic | amorphous chalcogenides self‐selecting memory ovonic threshold switching |
| url | https://doi.org/10.1002/advs.202408028 |
| work_keys_str_mv | AT hajunsung microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory AT minwoochoi microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory AT zhewu microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory AT hwasungchae microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory AT sungheo microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory AT youngjaekang microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory AT bonwonkoo microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory AT jongbongpark microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory AT wooyoungyang microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory AT yongyoungpark microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory AT yongnamham microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory AT kiyeonyang microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory AT changseunglee microscopicoriginofpolaritydependentvthshiftinamorphouschalcogenidesfor3dselfselectingmemory |