Electrically-driven reversible phonon transport manipulation in two-dimensional heterostructures
Abstract Phonon transport manipulation is crucial for various technological applications, such as thermal management in electronic devices, thermoelectric energy conversion, and thermal insulation. However, to date, viable approaches for manipulating phonon transport remain limited, particularly in...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-02-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-57224-8 |
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| author | Yufei Sheng Hongxin Zhu Siqi Xie Qian Lv Huaqing Xie Haidong Wang Ruitao Lv Hua Bao |
| author_facet | Yufei Sheng Hongxin Zhu Siqi Xie Qian Lv Huaqing Xie Haidong Wang Ruitao Lv Hua Bao |
| author_sort | Yufei Sheng |
| collection | DOAJ |
| description | Abstract Phonon transport manipulation is crucial for various technological applications, such as thermal management in electronic devices, thermoelectric energy conversion, and thermal insulation. However, to date, viable approaches for manipulating phonon transport remain limited, particularly in achieving reversible manipulation. Here, we achieve reversible manipulation of phonon transport in a monolayer MoSe2-WSe2 heterojunction, by modulating phonon thermal conductivity through the switching of bias voltage. The measured thermal conductivity under electrical forward bias is significantly lower than that observed under reverse cutoff. This effect becomes more pronounced with decreasing temperature. Through theoretical modeling supported by device simulation and first-principles calculation, the decrease in thermal conductivity under forward bias can be elucidated by higher carrier concentrations and electron temperatures. Our results provide an electrically-driven phonon transport manipulation approach, potentially opening up possibilities for dynamical and reversible thermal design in advanced semiconductor technologies. |
| format | Article |
| id | doaj-art-c66a63ea45714f93a573af78ac83a6aa |
| institution | DOAJ |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-c66a63ea45714f93a573af78ac83a6aa2025-08-20T03:03:58ZengNature PortfolioNature Communications2041-17232025-02-011611910.1038/s41467-025-57224-8Electrically-driven reversible phonon transport manipulation in two-dimensional heterostructuresYufei Sheng0Hongxin Zhu1Siqi Xie2Qian Lv3Huaqing Xie4Haidong Wang5Ruitao Lv6Hua Bao7Global Institute of Future Technology, Shanghai Jiao Tong UniversityDepartment of Engineering Mechanics, Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Tsinghua UniversityDepartment of Engineering Mechanics, Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Tsinghua UniversityState Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua UniversitySchool of Energy and Materials, Shanghai Polytechnic UniversityDepartment of Engineering Mechanics, Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Tsinghua UniversityState Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua UniversityGlobal Institute of Future Technology, Shanghai Jiao Tong UniversityAbstract Phonon transport manipulation is crucial for various technological applications, such as thermal management in electronic devices, thermoelectric energy conversion, and thermal insulation. However, to date, viable approaches for manipulating phonon transport remain limited, particularly in achieving reversible manipulation. Here, we achieve reversible manipulation of phonon transport in a monolayer MoSe2-WSe2 heterojunction, by modulating phonon thermal conductivity through the switching of bias voltage. The measured thermal conductivity under electrical forward bias is significantly lower than that observed under reverse cutoff. This effect becomes more pronounced with decreasing temperature. Through theoretical modeling supported by device simulation and first-principles calculation, the decrease in thermal conductivity under forward bias can be elucidated by higher carrier concentrations and electron temperatures. Our results provide an electrically-driven phonon transport manipulation approach, potentially opening up possibilities for dynamical and reversible thermal design in advanced semiconductor technologies.https://doi.org/10.1038/s41467-025-57224-8 |
| spellingShingle | Yufei Sheng Hongxin Zhu Siqi Xie Qian Lv Huaqing Xie Haidong Wang Ruitao Lv Hua Bao Electrically-driven reversible phonon transport manipulation in two-dimensional heterostructures Nature Communications |
| title | Electrically-driven reversible phonon transport manipulation in two-dimensional heterostructures |
| title_full | Electrically-driven reversible phonon transport manipulation in two-dimensional heterostructures |
| title_fullStr | Electrically-driven reversible phonon transport manipulation in two-dimensional heterostructures |
| title_full_unstemmed | Electrically-driven reversible phonon transport manipulation in two-dimensional heterostructures |
| title_short | Electrically-driven reversible phonon transport manipulation in two-dimensional heterostructures |
| title_sort | electrically driven reversible phonon transport manipulation in two dimensional heterostructures |
| url | https://doi.org/10.1038/s41467-025-57224-8 |
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