Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to β-Ga2O3 by removing surface carbon

Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to β-Ga2O3 by removing surface carbon

Preserving a contamination-free metal–semiconductor interface in β-Ga2O3 is critical to achieve consistently low resistance (< 1 Ω-mm) ohmic contacts. Here, we report a scanning transmission electron microscopy study on the variation in Ti/Au ohmic contact quality to (010) β-Ga2O3 in a convention...

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Bibliographic Details
Main Authors: Naomi Pieczulewski, Kathleen T. Smith, Corey M. Efaw, Arjan Singh, Cameron A. Gorsak, Joshua T. Buontempo, Jesse Wensel, Kathy Azizie, Katie Gann, Michael O. Thompson, Darrell G. Schlom, Farhan Rana, Hari P. Nair, Steven M. Hues, Elton Graugnard, Paul H. Davis, Debdeep Jena, Huili Grace Xing, David A. Muller
Format: Article
Language:English
Published: AIP Publishing LLC 2025-06-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0276786
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