Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films

Cadmium Selinide (CdSe) thin films prepared by thermal evaporation on glass substrates were irradiated with swift (100 MeV) Ni+7 ions at fluences of 1 × 1011 and 1 × 1012 cm – 2. The structural changes with respect to increasing fluence were observed by the means of X-ray diffraction (XRD). The modi...

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Main Authors: Rajesh Singh, Radha Srinivasan
Format: Article
Language:English
Published: Sumy State University 2016-06-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2016/2/articles/jnep_2016_V8_02036.pdf
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author Rajesh Singh
Radha Srinivasan
author_facet Rajesh Singh
Radha Srinivasan
author_sort Rajesh Singh
collection DOAJ
description Cadmium Selinide (CdSe) thin films prepared by thermal evaporation on glass substrates were irradiated with swift (100 MeV) Ni+7 ions at fluences of 1 × 1011 and 1 × 1012 cm – 2. The structural changes with respect to increasing fluence were observed by the means of X-ray diffraction (XRD). The modification in surface morphology and electrical properties has been analyzed as a function of fluence using XRD, AFM and I-V techniques. The AFM micrographs of irradiated thin films show the formation of small spherical grains and decrease in surface roughness with increasing fluence as well as I-V measurement revels that decrease in resistivity with increasing fluence.
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issn 2077-6772
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publisher Sumy State University
record_format Article
series Журнал нано- та електронної фізики
spelling doaj-art-c603291d2350415991bf6d22e8939eec2025-08-20T03:22:42ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722016-06-018202036-102036-310.21272/jnep.8(2).02036Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin FilmsRajesh Singh0Radha Srinivasan1Department of Physics, University of Mumbai, Santacruz (East), 400098 Mumbai, IndiaDepartment of Physics, University of Mumbai, Santacruz (East), 400098 Mumbai, IndiaCadmium Selinide (CdSe) thin films prepared by thermal evaporation on glass substrates were irradiated with swift (100 MeV) Ni+7 ions at fluences of 1 × 1011 and 1 × 1012 cm – 2. The structural changes with respect to increasing fluence were observed by the means of X-ray diffraction (XRD). The modification in surface morphology and electrical properties has been analyzed as a function of fluence using XRD, AFM and I-V techniques. The AFM micrographs of irradiated thin films show the formation of small spherical grains and decrease in surface roughness with increasing fluence as well as I-V measurement revels that decrease in resistivity with increasing fluence.http://jnep.sumdu.edu.ua/download/numbers/2016/2/articles/jnep_2016_V8_02036.pdfCdSe thin filmsSHIXRDAFMI-
spellingShingle Rajesh Singh
Radha Srinivasan
Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films
Журнал нано- та електронної фізики
CdSe thin films
SHI
XRD
AFM
I-
title Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films
title_full Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films
title_fullStr Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films
title_full_unstemmed Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films
title_short Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films
title_sort influence of the shi irradiation on the xrd afm and electrical properties of cdse thin films
topic CdSe thin films
SHI
XRD
AFM
I-
url http://jnep.sumdu.edu.ua/download/numbers/2016/2/articles/jnep_2016_V8_02036.pdf
work_keys_str_mv AT rajeshsingh influenceoftheshiirradiationonthexrdafmandelectricalpropertiesofcdsethinfilms
AT radhasrinivasan influenceoftheshiirradiationonthexrdafmandelectricalpropertiesofcdsethinfilms