Electrical Characterization of Sol-Gel Derived TiO2 Film on c-Si Substrate by Admittance Measurement
Transport and storage properties of sol-gel synthesized, namely, dip coating technique, titanium dioxide (TiO2) thin film over crystalline silicon (c-Si), has been investigated by means of current-voltage (I-V) and admittance analysis within different ambient. Considering the work function of anatas...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/458478 |
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