Electrical Characterization of Sol-Gel Derived TiO2 Film on c-Si Substrate by Admittance Measurement
Transport and storage properties of sol-gel synthesized, namely, dip coating technique, titanium dioxide (TiO2) thin film over crystalline silicon (c-Si), has been investigated by means of current-voltage (I-V) and admittance analysis within different ambient. Considering the work function of anatas...
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| Format: | Article |
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Wiley
2014-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/458478 |
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| author | Ayşe Evrim Saatci Orhan Özdemir |
| author_facet | Ayşe Evrim Saatci Orhan Özdemir |
| author_sort | Ayşe Evrim Saatci |
| collection | DOAJ |
| description | Transport and storage properties of sol-gel synthesized, namely, dip coating technique, titanium dioxide (TiO2) thin film over crystalline silicon (c-Si), has been investigated by means of current-voltage (I-V) and admittance analysis within different ambient. Considering the work function of anatase TiO2 film, determined by both FTIR and TG/DTA analysis, silver (Ag) as front metal electrode was chosen to hinder a barrier for charge carriers. Electrical analysis implied that Ag/TiO2/c-Si structure was actually constituted by Ag/TiO2/native silicon dioxide (SiO2)/c-Si [SIS] structure, in which SiO2 layer was identified by FTIR analysis. Consequently, the electrical features of the film were interpreted in terms of SIS diode that is capable of explaining C-V features. |
| format | Article |
| id | doaj-art-c5d16c4b8a3649c3aef4a9808484e155 |
| institution | DOAJ |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-c5d16c4b8a3649c3aef4a9808484e1552025-08-20T03:22:44ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422014-01-01201410.1155/2014/458478458478Electrical Characterization of Sol-Gel Derived TiO2 Film on c-Si Substrate by Admittance MeasurementAyşe Evrim Saatci0Orhan Özdemir1Department of Physics, Yıldız Technical University, Esenler, 34220 İstanbul, TurkeyDepartment of Physics, Yıldız Technical University, Esenler, 34220 İstanbul, TurkeyTransport and storage properties of sol-gel synthesized, namely, dip coating technique, titanium dioxide (TiO2) thin film over crystalline silicon (c-Si), has been investigated by means of current-voltage (I-V) and admittance analysis within different ambient. Considering the work function of anatase TiO2 film, determined by both FTIR and TG/DTA analysis, silver (Ag) as front metal electrode was chosen to hinder a barrier for charge carriers. Electrical analysis implied that Ag/TiO2/c-Si structure was actually constituted by Ag/TiO2/native silicon dioxide (SiO2)/c-Si [SIS] structure, in which SiO2 layer was identified by FTIR analysis. Consequently, the electrical features of the film were interpreted in terms of SIS diode that is capable of explaining C-V features.http://dx.doi.org/10.1155/2014/458478 |
| spellingShingle | Ayşe Evrim Saatci Orhan Özdemir Electrical Characterization of Sol-Gel Derived TiO2 Film on c-Si Substrate by Admittance Measurement Advances in Materials Science and Engineering |
| title | Electrical Characterization of Sol-Gel Derived TiO2 Film on c-Si Substrate by Admittance Measurement |
| title_full | Electrical Characterization of Sol-Gel Derived TiO2 Film on c-Si Substrate by Admittance Measurement |
| title_fullStr | Electrical Characterization of Sol-Gel Derived TiO2 Film on c-Si Substrate by Admittance Measurement |
| title_full_unstemmed | Electrical Characterization of Sol-Gel Derived TiO2 Film on c-Si Substrate by Admittance Measurement |
| title_short | Electrical Characterization of Sol-Gel Derived TiO2 Film on c-Si Substrate by Admittance Measurement |
| title_sort | electrical characterization of sol gel derived tio2 film on c si substrate by admittance measurement |
| url | http://dx.doi.org/10.1155/2014/458478 |
| work_keys_str_mv | AT ayseevrimsaatci electricalcharacterizationofsolgelderivedtio2filmoncsisubstratebyadmittancemeasurement AT orhanozdemir electricalcharacterizationofsolgelderivedtio2filmoncsisubstratebyadmittancemeasurement |