Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films
A transient lateral photovoltaic effect has been observed in Ag-doped ZnO thin films. Under the nonuniform irradiation of a 1064 nm pulsed laser, the photovoltaic response shows high sensitivity to the spot position on the film surface. The highest photovoltaic responsivity of 27.1 mV mJ−1 was obser...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2010-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2010/793481 |
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| Summary: | A transient lateral photovoltaic effect has been observed in Ag-doped ZnO thin films. Under the nonuniform irradiation of a 1064 nm pulsed laser, the photovoltaic response shows high sensitivity to the spot position on the film surface. The highest photovoltaic responsivity of 27.1 mV mJ−1 was observed, with a decline time of ∼1.5 ns and a full width at half-maximum (FWHM) of ∼4 ns. The photovoltaic position sensitivity can reach about 3.8 mV mJ−1 mm−1. This paper demonstrates the potential of Ag-doped ZnO films in the position-sensitive infrared detection |
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| ISSN: | 1110-662X 1687-529X |