Simulation of oxygen and carbon impurity transport during magnetically controlled Czochralski silicon growth

Simulation of oxygen and carbon impurity transport during magnetically controlled Czochralski silicon growth

This study establishes a multi-field coupling model that includes a thermal field, flow field, oxygen and carbon impurity concentration field, and magnetic field, focusing on controlling the transport of oxygen impurities at the free surface of the melt. The effects of cusp magnetic field introducti...

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Bibliographic Details
Main Authors: Wenyong Zhang, Dedong Gao, Shan Wang, Yan An, Haohao Wu, Haixin Lin, Lin Hou
Format: Article
Language:English
Published: AIP Publishing LLC 2025-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0239067
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