Low‐Defect‐Density Monolayer MoS2 Wafer by Oxygen‐Assisted Growth‐Repair Strategy

Low‐Defect‐Density Monolayer MoS2 Wafer by Oxygen‐Assisted Growth‐Repair Strategy

Abstract Atomic chalcogen vacancy is the most commonly observed defect category in two dimensional (2D) transition‐metal dichalcogenides, which can be detrimental to the intrinsic properties and device performance. Here a low‐defect density, high‐uniform, wafer‐scale single crystal epitaxial technol...

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Main Authors: Xiaomin Zhang, Jiahan Xu, Aomiao Zhi, Jian Wang, Yue Wang, Wenkai Zhu, Xingjie Han, Xuezeng Tian, Xuedong Bai, Baoquan Sun, Zhongming Wei, Jing Zhang, Kaiyou Wang
Format: Article
Language:English
Published: Wiley 2024-11-01
Series:Advanced Science
Subjects:
in situ defect passivation
MoS2
sulfur defects
transistors
wafer‐scale epitaxy
Online Access:https://doi.org/10.1002/advs.202408640
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