Photoluminescence Enhancement Effect of the Layered MoS2 Film Grown by CVD

The layered MoS2 films have been prepared by the chemical vapor deposition (CVD) method, which shows numerous MoS2 convex flakes (i.e., MoS2 nanosheets) on SiO2/Si substrates. The convex flake islands form a uniform layered film and the single flake corresponds to one small piece of monolayer MoS2 f...

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Main Authors: H. Li, X. H. Zhang, Z. K. Tang
Format: Article
Language:English
Published: Wiley 2017-01-01
Series:Journal of Engineering
Online Access:http://dx.doi.org/10.1155/2017/2845309
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author H. Li
X. H. Zhang
Z. K. Tang
author_facet H. Li
X. H. Zhang
Z. K. Tang
author_sort H. Li
collection DOAJ
description The layered MoS2 films have been prepared by the chemical vapor deposition (CVD) method, which shows numerous MoS2 convex flakes (i.e., MoS2 nanosheets) on SiO2/Si substrates. The convex flake islands form a uniform layered film and the single flake corresponds to one small piece of monolayer MoS2 film; they show a strong photoluminescence (PL) radiation as a whole. The thickness of the layered MoS2 films increases with the increases of growth time, the effect of diverse growth time on the properties of layered MoS2 films has been discussed, and the PL enhancement effect is due to the PL intensity accumulation from each of the convex flakes. The strong PL radiation has been found by annealing the samples and the reason has been analyzed. The layered MoS2 films could provide more photon energy than both the monolayer MoS2 film and the bulk MoS2. This work provides a fundamental study about the device fabrication based on layered MoS2 films. The optoelectronic devices based on this study will be more energy efficient.
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issn 2314-4904
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publishDate 2017-01-01
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spelling doaj-art-c5a9763c4bf044f681399ebb378158fb2025-08-20T02:18:39ZengWileyJournal of Engineering2314-49042314-49122017-01-01201710.1155/2017/28453092845309Photoluminescence Enhancement Effect of the Layered MoS2 Film Grown by CVDH. Li0X. H. Zhang1Z. K. Tang2Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, ChinaDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, ChinaInstitute of Applied Physics and Materials Engineering, University of Macau, MacauThe layered MoS2 films have been prepared by the chemical vapor deposition (CVD) method, which shows numerous MoS2 convex flakes (i.e., MoS2 nanosheets) on SiO2/Si substrates. The convex flake islands form a uniform layered film and the single flake corresponds to one small piece of monolayer MoS2 film; they show a strong photoluminescence (PL) radiation as a whole. The thickness of the layered MoS2 films increases with the increases of growth time, the effect of diverse growth time on the properties of layered MoS2 films has been discussed, and the PL enhancement effect is due to the PL intensity accumulation from each of the convex flakes. The strong PL radiation has been found by annealing the samples and the reason has been analyzed. The layered MoS2 films could provide more photon energy than both the monolayer MoS2 film and the bulk MoS2. This work provides a fundamental study about the device fabrication based on layered MoS2 films. The optoelectronic devices based on this study will be more energy efficient.http://dx.doi.org/10.1155/2017/2845309
spellingShingle H. Li
X. H. Zhang
Z. K. Tang
Photoluminescence Enhancement Effect of the Layered MoS2 Film Grown by CVD
Journal of Engineering
title Photoluminescence Enhancement Effect of the Layered MoS2 Film Grown by CVD
title_full Photoluminescence Enhancement Effect of the Layered MoS2 Film Grown by CVD
title_fullStr Photoluminescence Enhancement Effect of the Layered MoS2 Film Grown by CVD
title_full_unstemmed Photoluminescence Enhancement Effect of the Layered MoS2 Film Grown by CVD
title_short Photoluminescence Enhancement Effect of the Layered MoS2 Film Grown by CVD
title_sort photoluminescence enhancement effect of the layered mos2 film grown by cvd
url http://dx.doi.org/10.1155/2017/2845309
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