Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization

Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization

The purpose of this paper is to give a review on the state of the art of polycrystalline SiC material grown by low-pressure chemical vapor deposition (LPCVD). Nowadays, LPCVD is the main technique used for the deposition of polycrystalline SiC, both in academic research and industry. Indeed, the LPC...

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Bibliographic Details
Main Authors: Michail Gavalas, Yann Gallou, Didier Chaussende, Elisabeth Blanquet, Frédéric Mercier, Konstantinos Zekentes
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Micromachines
Subjects:
LPCVD
polycrystalline material
thin films
SiC
material characterization
Online Access:https://www.mdpi.com/2072-666X/16/3/276
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