Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates
This study concerns the characteristics of white GaN-based light-emitting diode (LED) on flexible substrates. The thin film GaN-based blue LEDs were directly transferred from sapphire onto the flexible polydimethylsiloxane (PDMS) substrates by laser lift-off (LLO) process. The PDMS substrates were i...
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2015/537163 |
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| author | Lung-Chien Chen Wen-Wei Lin Jun-Wei Chen |
| author_facet | Lung-Chien Chen Wen-Wei Lin Jun-Wei Chen |
| author_sort | Lung-Chien Chen |
| collection | DOAJ |
| description | This study concerns the characteristics of white GaN-based light-emitting diode (LED) on flexible substrates. The thin film GaN-based blue LEDs were directly transferred from sapphire onto the flexible polydimethylsiloxane (PDMS) substrates by laser lift-off (LLO) process. The PDMS substrates were incorporated 10–40% cerium doped yttrium aluminum garnet phosphor, YAG:Ce3+, and formed the GaN-based white LEDs. The white LEDs prepared by the GaN-based LEDs on the YAG-PDMS substrates reveal one peak at 470 nm corresponding to the emission of the GaN-based LED and a broadband included five weak peaks caused by YAG:Ce3+ phosphors. |
| format | Article |
| id | doaj-art-c55949f8a00d4e40869618ba2951ec96 |
| institution | DOAJ |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-c55949f8a00d4e40869618ba2951ec962025-08-20T03:22:42ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422015-01-01201510.1155/2015/537163537163Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible SubstratesLung-Chien Chen0Wen-Wei Lin1Jun-Wei Chen2Department of Electro-Optical Engineering, National University of Technology, 1, Sec. 3, Chung-Hsiao E. Road, Taipei 106, TaiwanDepartment of Electro-Optical Engineering, National University of Technology, 1, Sec. 3, Chung-Hsiao E. Road, Taipei 106, TaiwanDepartment of Electro-Optical Engineering, National University of Technology, 1, Sec. 3, Chung-Hsiao E. Road, Taipei 106, TaiwanThis study concerns the characteristics of white GaN-based light-emitting diode (LED) on flexible substrates. The thin film GaN-based blue LEDs were directly transferred from sapphire onto the flexible polydimethylsiloxane (PDMS) substrates by laser lift-off (LLO) process. The PDMS substrates were incorporated 10–40% cerium doped yttrium aluminum garnet phosphor, YAG:Ce3+, and formed the GaN-based white LEDs. The white LEDs prepared by the GaN-based LEDs on the YAG-PDMS substrates reveal one peak at 470 nm corresponding to the emission of the GaN-based LED and a broadband included five weak peaks caused by YAG:Ce3+ phosphors.http://dx.doi.org/10.1155/2015/537163 |
| spellingShingle | Lung-Chien Chen Wen-Wei Lin Jun-Wei Chen Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates Advances in Materials Science and Engineering |
| title | Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates |
| title_full | Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates |
| title_fullStr | Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates |
| title_full_unstemmed | Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates |
| title_short | Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates |
| title_sort | fabrication of gan based white light emitting diodes on yttrium aluminum garnet polydimethylsiloxane flexible substrates |
| url | http://dx.doi.org/10.1155/2015/537163 |
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