Ultraviolet absorption of point defects in high purity bulk AlN
Four point defects are analyzed in high purity bulk AlN crystals using electron paramagnetic resonance (EPR) spectroscopy. No EPR could be detected in the dark at temperatures as low at 4 K. The neutral donor and a newly detected center, M1, are observed during and after illumination with visible an...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-04-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0261981 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|