Ultraviolet absorption of point defects in high purity bulk AlN
Four point defects are analyzed in high purity bulk AlN crystals using electron paramagnetic resonance (EPR) spectroscopy. No EPR could be detected in the dark at temperatures as low at 4 K. The neutral donor and a newly detected center, M1, are observed during and after illumination with visible an...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0261981 |
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| author | Shafiqul I. Mollik M. E. Zvanut |
| author_facet | Shafiqul I. Mollik M. E. Zvanut |
| author_sort | Shafiqul I. Mollik |
| collection | DOAJ |
| description | Four point defects are analyzed in high purity bulk AlN crystals using electron paramagnetic resonance (EPR) spectroscopy. No EPR could be detected in the dark at temperatures as low at 4 K. The neutral donor and a newly detected center, M1, are observed during and after illumination with visible and near ultraviolet (UV) light, while two other defects are detected only during exposure to near and deep UV radiation. One is the neutral charge state of the carbon acceptor, and it, along with a second newly observed center, M2, are observed between 4 and 4.7 eV. Both M1 and M2 represent high spin centers and are stable in their EPR active charge state up to 373–473 K (100–200 °C). These centers must be considered as AlN advances toward a functional photonic and electronic material. |
| format | Article |
| id | doaj-art-c55631a847904afd95aafbecac472dea |
| institution | OA Journals |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-c55631a847904afd95aafbecac472dea2025-08-20T01:48:13ZengAIP Publishing LLCAIP Advances2158-32262025-04-01154045203045203-510.1063/5.0261981Ultraviolet absorption of point defects in high purity bulk AlNShafiqul I. Mollik0M. E. Zvanut1Department of Physics, University of Alabama at Birmingham, Birmingham, Alabama 35233, USADepartment of Physics, University of Alabama at Birmingham, Birmingham, Alabama 35233, USAFour point defects are analyzed in high purity bulk AlN crystals using electron paramagnetic resonance (EPR) spectroscopy. No EPR could be detected in the dark at temperatures as low at 4 K. The neutral donor and a newly detected center, M1, are observed during and after illumination with visible and near ultraviolet (UV) light, while two other defects are detected only during exposure to near and deep UV radiation. One is the neutral charge state of the carbon acceptor, and it, along with a second newly observed center, M2, are observed between 4 and 4.7 eV. Both M1 and M2 represent high spin centers and are stable in their EPR active charge state up to 373–473 K (100–200 °C). These centers must be considered as AlN advances toward a functional photonic and electronic material.http://dx.doi.org/10.1063/5.0261981 |
| spellingShingle | Shafiqul I. Mollik M. E. Zvanut Ultraviolet absorption of point defects in high purity bulk AlN AIP Advances |
| title | Ultraviolet absorption of point defects in high purity bulk AlN |
| title_full | Ultraviolet absorption of point defects in high purity bulk AlN |
| title_fullStr | Ultraviolet absorption of point defects in high purity bulk AlN |
| title_full_unstemmed | Ultraviolet absorption of point defects in high purity bulk AlN |
| title_short | Ultraviolet absorption of point defects in high purity bulk AlN |
| title_sort | ultraviolet absorption of point defects in high purity bulk aln |
| url | http://dx.doi.org/10.1063/5.0261981 |
| work_keys_str_mv | AT shafiqulimollik ultravioletabsorptionofpointdefectsinhighpuritybulkaln AT mezvanut ultravioletabsorptionofpointdefectsinhighpuritybulkaln |