Schottky Contact of Gallium on p-Type Silicon
The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for a host of existing and potential for future ap...
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| Format: | Article |
| Language: | English |
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Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_684-690.pdf |
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| _version_ | 1850178782755815424 |
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| author | B.P. Modi K.D. Patel |
| author_facet | B.P. Modi K.D. Patel |
| author_sort | B.P. Modi |
| collection | DOAJ |
| description | The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for a host of existing and potential for future applications in electronics, optoelectronics and microwave devices. In this context, gallium – silicon Schottky diode has been fabricated and analyzed. |
| format | Article |
| id | doaj-art-c551d57d474c48b3a7d7bf5efe0aa624 |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-c551d57d474c48b3a7d7bf5efe0aa6242025-08-20T02:18:39ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722011-01-0131684690Schottky Contact of Gallium on p-Type SiliconB.P. ModiK.D. PatelThe evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for a host of existing and potential for future applications in electronics, optoelectronics and microwave devices. In this context, gallium – silicon Schottky diode has been fabricated and analyzed.http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_684-690.pdfSchottky contactThin filmInterfacial strainBarrier heightFlat band barrier heightIdeality factor |
| spellingShingle | B.P. Modi K.D. Patel Schottky Contact of Gallium on p-Type Silicon Журнал нано- та електронної фізики Schottky contact Thin film Interfacial strain Barrier height Flat band barrier height Ideality factor |
| title | Schottky Contact of Gallium on p-Type Silicon |
| title_full | Schottky Contact of Gallium on p-Type Silicon |
| title_fullStr | Schottky Contact of Gallium on p-Type Silicon |
| title_full_unstemmed | Schottky Contact of Gallium on p-Type Silicon |
| title_short | Schottky Contact of Gallium on p-Type Silicon |
| title_sort | schottky contact of gallium on p type silicon |
| topic | Schottky contact Thin film Interfacial strain Barrier height Flat band barrier height Ideality factor |
| url | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%204/articles/jnep_2011_V3_N1(Part4)_684-690.pdf |
| work_keys_str_mv | AT bpmodi schottkycontactofgalliumonptypesilicon AT kdpatel schottkycontactofgalliumonptypesilicon |