Analysis and Simulation of Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors

Analysis and Simulation of Low-Frequency Noise in Indium-Zinc-Oxide Thin-Film Transistors

Low-frequency noise (LFN) is investigated in a set of indium-zinc-oxide thin-film transistors (IZO TFTs) with fixed channel width (<inline-formula> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula> &#x003D; <inline-formula> <tex-math notation=...

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Bibliographic Details
Main Authors: Yuan Liu, Hongyu He, Rongsheng Chen, Yun-Fei En, Bin Li, Yi-Qiang Chen
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Indium-zinc-oxide
thin film transistor
low frequency noise
BSIM
Online Access:https://ieeexplore.ieee.org/document/8277184/
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Summary:Low-frequency noise (LFN) is investigated in a set of indium-zinc-oxide thin-film transistors (IZO TFTs) with fixed channel width (<inline-formula> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula> &#x003D; <inline-formula> <tex-math notation="LaTeX">$10~\mu \text{m}$ </tex-math></inline-formula>) and different channel lengths (<inline-formula> <tex-math notation="LaTeX">$L\,\,=10$ </tex-math></inline-formula>, 20, 30, and <inline-formula> <tex-math notation="LaTeX">$40~\mu \text{m}$ </tex-math></inline-formula>) from sub-threshold, linear to saturation regions. The drain current noise power spectral density is measured as a function of effective gate voltage and drain current. The variation slopes of normalized noise with effective gate voltage are in the range of &#x2212;1.27 and &#x2212;1.48, which are close to the prediction of the mobility fluctuation mechanism. According to the <inline-formula> <tex-math notation="LaTeX">$\Delta N-\Delta \mu $ </tex-math></inline-formula> model, the flat-band voltage noise spectral density and Coulomb scattering coefficient are extracted. Subsequently, variations of noise with the drain current in the above threshold region are analyzed by considering the band-gap distribution of the tail states. Finally, the BSIM model is also used to model 1/<inline-formula> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> noise in the IZO TFTs. The noise parameter <inline-formula> <tex-math notation="LaTeX">$NOIB$ </tex-math></inline-formula> is extracted which is inversely proportional to the effective gate voltage. Good agreements are achieved between the simulated and measured results in the linear region.
ISSN:2168-6734

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