DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

An N-type 50 V RF LDMOS with a RESURF (reduced surface field) structure of dual field plates (grounded shield, or G-shield) was investigated. The effect of the two field plates and N-drift region, including the junction depth and dopant concentration, on the DC characteristics was analyzed by employ...

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Bibliographic Details
Main Authors: Xiangming Xu, Pengliang Ci, Xiaoyu Tang, Jing Shi, Zhengliang Zhou, Jingfeng Huang, Peng-Fei Wang, David Wei Zhang
Format: Article
Language:English
Published: Wiley 2015-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2015/379746
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