Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design
We discuss details of the Charge Sheet SuperJunction (CSSJ) in 4H-Silicon Carbide (SiC). This device was earlier proposed in Si material. A CSSJ is obtained by replacing the p-pillar of a SJ by a bilayer insulator, e.g., Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9186681/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | We discuss details of the Charge Sheet SuperJunction (CSSJ) in 4H-Silicon Carbide (SiC). This device was earlier proposed in Si material. A CSSJ is obtained by replacing the p-pillar of a SJ by a bilayer insulator, e.g., Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>; the inter-layer interface of this insulator has a negative charge-sheet, whose magnitude is easily controlled via the insulator deposition temperature. This charge-sheet depletes the n-pillar. Two potential advantages of this structural modification are brought out. First, it can avoid the problems related to SiC SJ’s p-pillar fabrication. Second, it can lower the specific-on resistance, <inline-formula> <tex-math notation="LaTeX">$R_{ONSP}$ </tex-math></inline-formula>, below that of SJ by 5–45 %, since SiC technology allows the insulator to be thinner than the p-pillar. The critical field, <inline-formula> <tex-math notation="LaTeX">$E_{C}$ </tex-math></inline-formula>, in SiC is > 10 times higher than that in Si. We give an analytical breakdown voltage, <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula>, model, which shows that the <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula> sensitivity to charge imbalance due to inevitable process variations is inversely proportional to <inline-formula> <tex-math notation="LaTeX">$E_{C}$ </tex-math></inline-formula>; hence, this sensitivity of CSSJ in SiC is > 10 times lower than that in Si. On the other hand, we give numerical simulations to establish that, in spite of <inline-formula> <tex-math notation="LaTeX">$E_{C}$ </tex-math></inline-formula> differences, the SiC CSSJ inherits the advantage of upto 15% higher <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula> compared to SiC SJ, from its Si counterparts. We show how our prior analytical procedure of designing a SJ can be adapted to design a CSSJ having a lower <inline-formula> <tex-math notation="LaTeX">$R_{ONSP}$ </tex-math></inline-formula> than the SJ, at a specified <inline-formula> <tex-math notation="LaTeX">$V_{BR}$ </tex-math></inline-formula> in 1–10 kV range and charge imbalance ≤ 20 %. Our work should strengthen the motivation for fabricating the CSSJ in SiC. |
|---|---|
| ISSN: | 2168-6734 |