Doping Effects on Magnetic and Electronic Transport Properties in (Ba<sub>1−x</sub>Rb<sub>x</sub>)(Zn<sub>1−y</sub>Mn<sub>y</sub>)<sub>2</sub>As<sub>2</sub> (0.1 ≤ x, y ≤ 0.25)
Diluted magnetic semiconductors (DMSs) represent a significant area of interest for research and applications in spintronics. Recently, DMSs derived from BaZn<sub>2</sub>As<sub>2</sub> have garnered significant interest due to the record Curie temperature (<i>T</i>...
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2025-06-01
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| author | Guoqiang Zhao Yi Peng Kenji M. Kojima Yipeng Cai Xiang Li Kan Zhao Shengli Guo Wei Han Yongqing Li Fanlong Ning Xiancheng Wang Bo Gu Gang Su Sadamichi Maekawa Yasutomo J. Uemura Changqing Jin |
| author_facet | Guoqiang Zhao Yi Peng Kenji M. Kojima Yipeng Cai Xiang Li Kan Zhao Shengli Guo Wei Han Yongqing Li Fanlong Ning Xiancheng Wang Bo Gu Gang Su Sadamichi Maekawa Yasutomo J. Uemura Changqing Jin |
| author_sort | Guoqiang Zhao |
| collection | DOAJ |
| description | Diluted magnetic semiconductors (DMSs) represent a significant area of interest for research and applications in spintronics. Recently, DMSs derived from BaZn<sub>2</sub>As<sub>2</sub> have garnered significant interest due to the record Curie temperature (<i>T</i><sub>C</sub>) of 260 K. However, the influence of doping on their magnetic evolution and transport characteristics has not been thoroughly investigated. This study aims to fill this gap through susceptibility and magnetization measurements, electric transport analysis, and muon spin relaxation and rotation (µSR) measurements on (Ba<sub>1−x</sub>Rb<sub>x</sub>)(Zn<sub>1−y</sub>Mn<sub>y</sub>)<sub>2</sub>As<sub>2</sub> (0.1 ≤ x, y ≤ 0.25, BRZMA). Key findings include the following: (1) BRZMA showed a maximum <i>T</i><sub>C</sub> of 138 K, much lower than (Ba,K)(Zn,Mn)<sub>2</sub>As, because of a reduced carrier concentration. (2) A substantial electromagnetic coupling is evidenced by a negative magnetoresistance of up to 34% observed in optimally doped BRZMA. (3) A 100% static magnetic ordered volume fraction is achieved in the low-temperature region, indicating a homogeneous magnet. (4) Furthermore, a systematic and innovative methodology has been initially proposed, characterized by clear step-by-step instructions aimed at enhancing <i>T</i><sub>C</sub>, grounded in robust experimental findings. The findings presented provide valuable insights into the spin–charge interplay concerning magnetic and electronic transport properties. Furthermore, they offer clear direction for the investigation of higher <i>T</i><sub>C</sub> DMSs. |
| format | Article |
| id | doaj-art-c4367a895a8740128e5f60bc1bb584af |
| institution | Kabale University |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-06-01 |
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| series | Nanomaterials |
| spelling | doaj-art-c4367a895a8740128e5f60bc1bb584af2025-08-20T03:50:16ZengMDPI AGNanomaterials2079-49912025-06-01151397510.3390/nano15130975Doping Effects on Magnetic and Electronic Transport Properties in (Ba<sub>1−x</sub>Rb<sub>x</sub>)(Zn<sub>1−y</sub>Mn<sub>y</sub>)<sub>2</sub>As<sub>2</sub> (0.1 ≤ x, y ≤ 0.25)Guoqiang Zhao0Yi Peng1Kenji M. Kojima2Yipeng Cai3Xiang Li4Kan Zhao5Shengli Guo6Wei Han7Yongqing Li8Fanlong Ning9Xiancheng Wang10Bo Gu11Gang Su12Sadamichi Maekawa13Yasutomo J. Uemura14Changqing Jin15Kavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences, Beijing 101408, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaTRIUMF, Vancouver, BC V6T 2A3, CanadaDepartment of Physics, Columbia University, New York, NY 10027, USAKavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences, Beijing 101408, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaSchool of Physics, Zhejiang University, Hangzhou 310027, ChinaSchool of Physics and Electronic Engineering, Hebei Minzu Normal University, Chengde 067000, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaSchool of Physics, Zhejiang University, Hangzhou 310027, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaKavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences, Beijing 101408, ChinaKavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences, Beijing 101408, ChinaKavli Institute for Theoretical Sciences (KITS), University of Chinese Academy of Sciences, Beijing 101408, ChinaDepartment of Physics, Columbia University, New York, NY 10027, USABeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaDiluted magnetic semiconductors (DMSs) represent a significant area of interest for research and applications in spintronics. Recently, DMSs derived from BaZn<sub>2</sub>As<sub>2</sub> have garnered significant interest due to the record Curie temperature (<i>T</i><sub>C</sub>) of 260 K. However, the influence of doping on their magnetic evolution and transport characteristics has not been thoroughly investigated. This study aims to fill this gap through susceptibility and magnetization measurements, electric transport analysis, and muon spin relaxation and rotation (µSR) measurements on (Ba<sub>1−x</sub>Rb<sub>x</sub>)(Zn<sub>1−y</sub>Mn<sub>y</sub>)<sub>2</sub>As<sub>2</sub> (0.1 ≤ x, y ≤ 0.25, BRZMA). Key findings include the following: (1) BRZMA showed a maximum <i>T</i><sub>C</sub> of 138 K, much lower than (Ba,K)(Zn,Mn)<sub>2</sub>As, because of a reduced carrier concentration. (2) A substantial electromagnetic coupling is evidenced by a negative magnetoresistance of up to 34% observed in optimally doped BRZMA. (3) A 100% static magnetic ordered volume fraction is achieved in the low-temperature region, indicating a homogeneous magnet. (4) Furthermore, a systematic and innovative methodology has been initially proposed, characterized by clear step-by-step instructions aimed at enhancing <i>T</i><sub>C</sub>, grounded in robust experimental findings. The findings presented provide valuable insights into the spin–charge interplay concerning magnetic and electronic transport properties. Furthermore, they offer clear direction for the investigation of higher <i>T</i><sub>C</sub> DMSs.https://www.mdpi.com/2079-4991/15/13/975diluted magnetic semiconductorcolossal magnetoresistanceCurie temperaturecarrier concentrationhomogeneous ferromagnets |
| spellingShingle | Guoqiang Zhao Yi Peng Kenji M. Kojima Yipeng Cai Xiang Li Kan Zhao Shengli Guo Wei Han Yongqing Li Fanlong Ning Xiancheng Wang Bo Gu Gang Su Sadamichi Maekawa Yasutomo J. Uemura Changqing Jin Doping Effects on Magnetic and Electronic Transport Properties in (Ba<sub>1−x</sub>Rb<sub>x</sub>)(Zn<sub>1−y</sub>Mn<sub>y</sub>)<sub>2</sub>As<sub>2</sub> (0.1 ≤ x, y ≤ 0.25) Nanomaterials diluted magnetic semiconductor colossal magnetoresistance Curie temperature carrier concentration homogeneous ferromagnets |
| title | Doping Effects on Magnetic and Electronic Transport Properties in (Ba<sub>1−x</sub>Rb<sub>x</sub>)(Zn<sub>1−y</sub>Mn<sub>y</sub>)<sub>2</sub>As<sub>2</sub> (0.1 ≤ x, y ≤ 0.25) |
| title_full | Doping Effects on Magnetic and Electronic Transport Properties in (Ba<sub>1−x</sub>Rb<sub>x</sub>)(Zn<sub>1−y</sub>Mn<sub>y</sub>)<sub>2</sub>As<sub>2</sub> (0.1 ≤ x, y ≤ 0.25) |
| title_fullStr | Doping Effects on Magnetic and Electronic Transport Properties in (Ba<sub>1−x</sub>Rb<sub>x</sub>)(Zn<sub>1−y</sub>Mn<sub>y</sub>)<sub>2</sub>As<sub>2</sub> (0.1 ≤ x, y ≤ 0.25) |
| title_full_unstemmed | Doping Effects on Magnetic and Electronic Transport Properties in (Ba<sub>1−x</sub>Rb<sub>x</sub>)(Zn<sub>1−y</sub>Mn<sub>y</sub>)<sub>2</sub>As<sub>2</sub> (0.1 ≤ x, y ≤ 0.25) |
| title_short | Doping Effects on Magnetic and Electronic Transport Properties in (Ba<sub>1−x</sub>Rb<sub>x</sub>)(Zn<sub>1−y</sub>Mn<sub>y</sub>)<sub>2</sub>As<sub>2</sub> (0.1 ≤ x, y ≤ 0.25) |
| title_sort | doping effects on magnetic and electronic transport properties in ba sub 1 x sub rb sub x sub zn sub 1 y sub mn sub y sub sub 2 sub as sub 2 sub 0 1 ≤ x y ≤ 0 25 |
| topic | diluted magnetic semiconductor colossal magnetoresistance Curie temperature carrier concentration homogeneous ferromagnets |
| url | https://www.mdpi.com/2079-4991/15/13/975 |
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