Enhanced Implied Open Circuit Voltage of MoS2 via Cation‐based TFSI Passivation
Abstract Monolayer molybdenum disulphide (MoS2) holds great potential for optoelectronic and photovoltaic applications, yet its performance is limited by intrinsic defects, such as sulfur vacancies, that hinder photoluminescence (PL) and charge carrier dynamics. This study investigates the effects o...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
|
| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202500059 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849424631078846464 |
|---|---|
| author | Ary Anggara Wibowo Anh Dinh Bui Zhehao Sun Li‐chun Chang Zongyou Yin Yuerui Lu Daniel Macdonald Hieu Trong Nguyen |
| author_facet | Ary Anggara Wibowo Anh Dinh Bui Zhehao Sun Li‐chun Chang Zongyou Yin Yuerui Lu Daniel Macdonald Hieu Trong Nguyen |
| author_sort | Ary Anggara Wibowo |
| collection | DOAJ |
| description | Abstract Monolayer molybdenum disulphide (MoS2) holds great potential for optoelectronic and photovoltaic applications, yet its performance is limited by intrinsic defects, such as sulfur vacancies, that hinder photoluminescence (PL) and charge carrier dynamics. This study investigates the effects of passivation using cation‐based bis(trifluoromethanesulfonimide) (TFSI) treatments (Li‐TFSI, Cs‐TFSI, and Rb‐TFSI) on the optoelectronic properties of MoS2 monolayers. Implied open‐circuit voltages (iVoc) at 1 sun illumination are taken from photoluminescence measurements, yielding post‐treatment values of 1425, 1351, and 1381 mV for Li‐TFSI, Rb‐TFSI, and Cs‐TFSI, respectively, indicating reduced non‐radiative recombination. Optical absorption also increased after the cation‐based TFSI treatment, leading to expected improvements in short‐circuit current densities (JSC). These results demonstrate that cations can play an important role in reducing defect‐related recombination and improving charge carrier dynamics, and that cation‐based TFSI passivation may help to enhance the efficiency of MoS2‐based optoelectronic devices. |
| format | Article |
| id | doaj-art-c41e24012d82439fba9dddbc49d2f555 |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-c41e24012d82439fba9dddbc49d2f5552025-08-20T03:30:04ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-06-011212n/an/a10.1002/admi.202500059Enhanced Implied Open Circuit Voltage of MoS2 via Cation‐based TFSI PassivationAry Anggara Wibowo0Anh Dinh Bui1Zhehao Sun2Li‐chun Chang3Zongyou Yin4Yuerui Lu5Daniel Macdonald6Hieu Trong Nguyen7School of Engineering Australian National University Acton 2601 AustraliaSchool of Engineering Australian National University Acton 2601 AustraliaResearch School of Chemistry Australian National University Acton 2601 AustraliaSchool of Engineering Australian National University Acton 2601 AustraliaResearch School of Chemistry Australian National University Acton 2601 AustraliaSchool of Engineering Australian National University Acton 2601 AustraliaSchool of Engineering Australian National University Acton 2601 AustraliaSchool of Engineering Australian National University Acton 2601 AustraliaAbstract Monolayer molybdenum disulphide (MoS2) holds great potential for optoelectronic and photovoltaic applications, yet its performance is limited by intrinsic defects, such as sulfur vacancies, that hinder photoluminescence (PL) and charge carrier dynamics. This study investigates the effects of passivation using cation‐based bis(trifluoromethanesulfonimide) (TFSI) treatments (Li‐TFSI, Cs‐TFSI, and Rb‐TFSI) on the optoelectronic properties of MoS2 monolayers. Implied open‐circuit voltages (iVoc) at 1 sun illumination are taken from photoluminescence measurements, yielding post‐treatment values of 1425, 1351, and 1381 mV for Li‐TFSI, Rb‐TFSI, and Cs‐TFSI, respectively, indicating reduced non‐radiative recombination. Optical absorption also increased after the cation‐based TFSI treatment, leading to expected improvements in short‐circuit current densities (JSC). These results demonstrate that cations can play an important role in reducing defect‐related recombination and improving charge carrier dynamics, and that cation‐based TFSI passivation may help to enhance the efficiency of MoS2‐based optoelectronic devices.https://doi.org/10.1002/admi.202500059cationsiVOCJSCMoS2passivation |
| spellingShingle | Ary Anggara Wibowo Anh Dinh Bui Zhehao Sun Li‐chun Chang Zongyou Yin Yuerui Lu Daniel Macdonald Hieu Trong Nguyen Enhanced Implied Open Circuit Voltage of MoS2 via Cation‐based TFSI Passivation Advanced Materials Interfaces cations iVOC JSC MoS2 passivation |
| title | Enhanced Implied Open Circuit Voltage of MoS2 via Cation‐based TFSI Passivation |
| title_full | Enhanced Implied Open Circuit Voltage of MoS2 via Cation‐based TFSI Passivation |
| title_fullStr | Enhanced Implied Open Circuit Voltage of MoS2 via Cation‐based TFSI Passivation |
| title_full_unstemmed | Enhanced Implied Open Circuit Voltage of MoS2 via Cation‐based TFSI Passivation |
| title_short | Enhanced Implied Open Circuit Voltage of MoS2 via Cation‐based TFSI Passivation |
| title_sort | enhanced implied open circuit voltage of mos2 via cation based tfsi passivation |
| topic | cations iVOC JSC MoS2 passivation |
| url | https://doi.org/10.1002/admi.202500059 |
| work_keys_str_mv | AT aryanggarawibowo enhancedimpliedopencircuitvoltageofmos2viacationbasedtfsipassivation AT anhdinhbui enhancedimpliedopencircuitvoltageofmos2viacationbasedtfsipassivation AT zhehaosun enhancedimpliedopencircuitvoltageofmos2viacationbasedtfsipassivation AT lichunchang enhancedimpliedopencircuitvoltageofmos2viacationbasedtfsipassivation AT zongyouyin enhancedimpliedopencircuitvoltageofmos2viacationbasedtfsipassivation AT yueruilu enhancedimpliedopencircuitvoltageofmos2viacationbasedtfsipassivation AT danielmacdonald enhancedimpliedopencircuitvoltageofmos2viacationbasedtfsipassivation AT hieutrongnguyen enhancedimpliedopencircuitvoltageofmos2viacationbasedtfsipassivation |