Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at Low Power Plasma
In this paper we report on synthesis of thin films of silicon dioxide (SiO2) using conventional plasma enhanced chemical vapor deposition (PE-CVD) from pure silane (SiH4) and oxygen (O2), gas mixture at low RF power (30 Watt) and at moderate substrate temperature (250 °C). We have systematically inv...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%202/articles/jnep_2011_V3_N1(Part2)_370-375.pdf |
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