Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at Low Power Plasma
In this paper we report on synthesis of thin films of silicon dioxide (SiO2) using conventional plasma enhanced chemical vapor deposition (PE-CVD) from pure silane (SiH4) and oxygen (O2), gas mixture at low RF power (30 Watt) and at moderate substrate temperature (250 °C). We have systematically inv...
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| Format: | Article |
| Language: | English |
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Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%202/articles/jnep_2011_V3_N1(Part2)_370-375.pdf |
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| author | S.P. Gore A.M. Funde T.S. Salve T.M. Bhave S.R. Jadkar S.V. Ghaisas |
| author_facet | S.P. Gore A.M. Funde T.S. Salve T.M. Bhave S.R. Jadkar S.V. Ghaisas |
| author_sort | S.P. Gore |
| collection | DOAJ |
| description | In this paper we report on synthesis of thin films of silicon dioxide (SiO2) using conventional plasma enhanced chemical vapor deposition (PE-CVD) from pure silane (SiH4) and oxygen (O2), gas mixture at low RF power (30 Watt) and at moderate substrate temperature (250 °C). We have systematically investigated the material properties of these films as a function of oxygen partial pressure in view of their use in MOS devices. The formation of SiO2 thin films is confirmed by Fourier transform infrared (FTIR) spectroscopy. The thickness and refractive indices of the films measured by ellipsometry. C-V measurement shows that the electrical properties are directly related to process parameters and Si/SiO2 interface. The MOS structures were also fabricated from optimized SiO2 layer to study C-V measurement and to estimate interface, oxide and effective border traps density. |
| format | Article |
| id | doaj-art-c41868439fb144bba00bc9eac516d489 |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-c41868439fb144bba00bc9eac516d4892025-08-20T02:02:36ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722011-01-0131370375Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at Low Power PlasmaS.P. GoreA.M. FundeT.S. SalveT.M. BhaveS.R. JadkarS.V. GhaisasIn this paper we report on synthesis of thin films of silicon dioxide (SiO2) using conventional plasma enhanced chemical vapor deposition (PE-CVD) from pure silane (SiH4) and oxygen (O2), gas mixture at low RF power (30 Watt) and at moderate substrate temperature (250 °C). We have systematically investigated the material properties of these films as a function of oxygen partial pressure in view of their use in MOS devices. The formation of SiO2 thin films is confirmed by Fourier transform infrared (FTIR) spectroscopy. The thickness and refractive indices of the films measured by ellipsometry. C-V measurement shows that the electrical properties are directly related to process parameters and Si/SiO2 interface. The MOS structures were also fabricated from optimized SiO2 layer to study C-V measurement and to estimate interface, oxide and effective border traps density.http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%202/articles/jnep_2011_V3_N1(Part2)_370-375.pdfPlasma Enhanced CVDC-V PlotsMetal Oxide Semi-ConductorFTIRUV-Visible SpectroscopyEllipsometry |
| spellingShingle | S.P. Gore A.M. Funde T.S. Salve T.M. Bhave S.R. Jadkar S.V. Ghaisas Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at Low Power Plasma Журнал нано- та електронної фізики Plasma Enhanced CVD C-V Plots Metal Oxide Semi-Conductor FTIR UV-Visible Spectroscopy Ellipsometry |
| title | Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at Low Power Plasma |
| title_full | Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at Low Power Plasma |
| title_fullStr | Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at Low Power Plasma |
| title_full_unstemmed | Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at Low Power Plasma |
| title_short | Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at Low Power Plasma |
| title_sort | properties of silicon dioxide films prepared using silane and oxygen feeds by pe cvd at low power plasma |
| topic | Plasma Enhanced CVD C-V Plots Metal Oxide Semi-Conductor FTIR UV-Visible Spectroscopy Ellipsometry |
| url | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%202/articles/jnep_2011_V3_N1(Part2)_370-375.pdf |
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