Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations
In mobile dynamic random access memory (DRAM) receivers, the data strobe complement (DQS_c) and data strobe true (DQS_t) signals must be maintained at high and low voltage levels in the write data strobe off (WDQS_OFF) mode. Therefore, we developed a voltage regulation circuit to optimize the differ...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
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| Series: | Engineering Proceedings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-4591/92/1/81 |
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