Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations
In mobile dynamic random access memory (DRAM) receivers, the data strobe complement (DQS_c) and data strobe true (DQS_t) signals must be maintained at high and low voltage levels in the write data strobe off (WDQS_OFF) mode. Therefore, we developed a voltage regulation circuit to optimize the differ...
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MDPI AG
2025-05-01
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| author | Yao-Zhong Zhang Chiung-An Chen Powen Hsiao Bo-Yi Li Van-Khang Nguyen |
| author_facet | Yao-Zhong Zhang Chiung-An Chen Powen Hsiao Bo-Yi Li Van-Khang Nguyen |
| author_sort | Yao-Zhong Zhang |
| collection | DOAJ |
| description | In mobile dynamic random access memory (DRAM) receivers, the data strobe complement (DQS_c) and data strobe true (DQS_t) signals must be maintained at high and low voltage levels in the write data strobe off (WDQS_OFF) mode. Therefore, we developed a voltage regulation circuit to optimize the differential voltage signals of DQS_c and DQS_t, ensuring a high voltage level above 0.9 V and a low voltage level below 0.3 V. Experimental results showed that the circuit stably maintained DQS_c above 0.9 V and DQS_t below 0.3 V before the write preamble time (tWPRE) and in WDQS_OFF mode. This configuration effectively prevents unintended activation in the mobile DRAM DQS input receiver. |
| format | Article |
| id | doaj-art-c3f5baec538f457ab92da7579e2fea96 |
| institution | OA Journals |
| issn | 2673-4591 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Engineering Proceedings |
| spelling | doaj-art-c3f5baec538f457ab92da7579e2fea962025-08-20T02:21:09ZengMDPI AGEngineering Proceedings2673-45912025-05-019218110.3390/engproc2025092081Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended ActivationsYao-Zhong Zhang0Chiung-An Chen1Powen Hsiao2Bo-Yi Li3Van-Khang Nguyen4Department of Electrical Engineering, Ming Chi University of Technology, New Taipei City 243303, TaiwanDepartment of Electrical Engineering, Ming Chi University of Technology, New Taipei City 243303, TaiwanDepartment of Electrical Engineering, Nanya Technology, New Taipei City 243303, TaiwanDepartment of Electrical Engineering, Ming Chi University of Technology, New Taipei City 243303, TaiwanDepartment of Electrical Engineering, Ming Chi University of Technology, New Taipei City 243303, TaiwanIn mobile dynamic random access memory (DRAM) receivers, the data strobe complement (DQS_c) and data strobe true (DQS_t) signals must be maintained at high and low voltage levels in the write data strobe off (WDQS_OFF) mode. Therefore, we developed a voltage regulation circuit to optimize the differential voltage signals of DQS_c and DQS_t, ensuring a high voltage level above 0.9 V and a low voltage level below 0.3 V. Experimental results showed that the circuit stably maintained DQS_c above 0.9 V and DQS_t below 0.3 V before the write preamble time (tWPRE) and in WDQS_OFF mode. This configuration effectively prevents unintended activation in the mobile DRAM DQS input receiver.https://www.mdpi.com/2673-4591/92/1/81receiverdifferential pairsmobile DRAMvoltage regulation |
| spellingShingle | Yao-Zhong Zhang Chiung-An Chen Powen Hsiao Bo-Yi Li Van-Khang Nguyen Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations Engineering Proceedings receiver differential pairs mobile DRAM voltage regulation |
| title | Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations |
| title_full | Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations |
| title_fullStr | Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations |
| title_full_unstemmed | Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations |
| title_short | Voltage Regulation of Data Strobe Inputs in Mobile Dynamic Random Access Memory to Prevent Unintended Activations |
| title_sort | voltage regulation of data strobe inputs in mobile dynamic random access memory to prevent unintended activations |
| topic | receiver differential pairs mobile DRAM voltage regulation |
| url | https://www.mdpi.com/2673-4591/92/1/81 |
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