Short-range order controlled amphoteric behavior of the Si dopant in Al-rich AlGaN
Abstract AlGaN alloys with high Al content offer the possibility to create deep ultraviolet light sources emitting at wavelengths ≤ 240 nm with enhanced quantum efficiency. However, increasing the band gap when the Al content surpasses ~80% leads to problems with n-type doping of AlGaN alloys with...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-05-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-60312-4 |
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