Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing
Abstract Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception. They hold great promise in neuromorphic visual systems (NVs). This study introduces the amorphous wide-bandgap Ga2O3 photoelectric synaptic memristor, which achieves 3-bit data storage thro...
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| Format: | Article |
| Language: | English |
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Nature Publishing Group
2025-04-01
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| Series: | Light: Science & Applications |
| Online Access: | https://doi.org/10.1038/s41377-025-01773-6 |
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| author | Dongsheng Cui Mengjiao Pei Zhenhua Lin Hong Zhang Mengyang Kang Yifei Wang Xiangxiang Gao Jie Su Jinshui Miao Yun Li Jincheng Zhang Yue Hao Jingjing Chang |
| author_facet | Dongsheng Cui Mengjiao Pei Zhenhua Lin Hong Zhang Mengyang Kang Yifei Wang Xiangxiang Gao Jie Su Jinshui Miao Yun Li Jincheng Zhang Yue Hao Jingjing Chang |
| author_sort | Dongsheng Cui |
| collection | DOAJ |
| description | Abstract Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception. They hold great promise in neuromorphic visual systems (NVs). This study introduces the amorphous wide-bandgap Ga2O3 photoelectric synaptic memristor, which achieves 3-bit data storage through the adjustment of current compliance (I cc) and the utilization of variable ultraviolet (UV-254 nm) light intensities. The “AND” and “OR” logic gates in memristor-aided logic (MAGIC) are implemented by utilizing voltage polarity and UV light as input signals. The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation (PPF), spike-intensity dependent plasticity (SIDP), spike-number dependent plasticity (SNDP), spike-time dependent plasticity (STDP), spike-frequency dependent plasticity (SFDP) and the learning experience behavior. Finally, when integrated into an artificial neural network (ANN), the Ag/Ga2O3/Pt memristive device mimicked optical pulse potentiation and electrical pulse depression with high pattern accuracy (90.7%). The single memristive cells with multifunctional features are promising candidates for optoelectronic memory storage, neuromorphic computing, and artificial visual perception applications. |
| format | Article |
| id | doaj-art-c3eb69b1f0724d5b998dd685af8ee7a0 |
| institution | OA Journals |
| issn | 2047-7538 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Nature Publishing Group |
| record_format | Article |
| series | Light: Science & Applications |
| spelling | doaj-art-c3eb69b1f0724d5b998dd685af8ee7a02025-08-20T02:28:08ZengNature Publishing GroupLight: Science & Applications2047-75382025-04-0114111110.1038/s41377-025-01773-6Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computingDongsheng Cui0Mengjiao Pei1Zhenhua Lin2Hong Zhang3Mengyang Kang4Yifei Wang5Xiangxiang Gao6Jie Su7Jinshui Miao8Yun Li9Jincheng Zhang10Yue Hao11Jingjing Chang12Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian UniversityNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityAdvanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian UniversityAdvanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian UniversityAdvanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian UniversityAdvanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian UniversityAdvanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian UniversityAdvanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian UniversityState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of SciencesNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityAdvanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian UniversityState Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian UniversityAdvanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian UniversityAbstract Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception. They hold great promise in neuromorphic visual systems (NVs). This study introduces the amorphous wide-bandgap Ga2O3 photoelectric synaptic memristor, which achieves 3-bit data storage through the adjustment of current compliance (I cc) and the utilization of variable ultraviolet (UV-254 nm) light intensities. The “AND” and “OR” logic gates in memristor-aided logic (MAGIC) are implemented by utilizing voltage polarity and UV light as input signals. The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation (PPF), spike-intensity dependent plasticity (SIDP), spike-number dependent plasticity (SNDP), spike-time dependent plasticity (STDP), spike-frequency dependent plasticity (SFDP) and the learning experience behavior. Finally, when integrated into an artificial neural network (ANN), the Ag/Ga2O3/Pt memristive device mimicked optical pulse potentiation and electrical pulse depression with high pattern accuracy (90.7%). The single memristive cells with multifunctional features are promising candidates for optoelectronic memory storage, neuromorphic computing, and artificial visual perception applications.https://doi.org/10.1038/s41377-025-01773-6 |
| spellingShingle | Dongsheng Cui Mengjiao Pei Zhenhua Lin Hong Zhang Mengyang Kang Yifei Wang Xiangxiang Gao Jie Su Jinshui Miao Yun Li Jincheng Zhang Yue Hao Jingjing Chang Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing Light: Science & Applications |
| title | Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing |
| title_full | Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing |
| title_fullStr | Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing |
| title_full_unstemmed | Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing |
| title_short | Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing |
| title_sort | versatile optoelectronic memristor based on wide bandgap ga2o3 for artificial synapses and neuromorphic computing |
| url | https://doi.org/10.1038/s41377-025-01773-6 |
| work_keys_str_mv | AT dongshengcui versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing AT mengjiaopei versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing AT zhenhualin versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing AT hongzhang versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing AT mengyangkang versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing AT yifeiwang versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing AT xiangxianggao versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing AT jiesu versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing AT jinshuimiao versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing AT yunli versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing AT jinchengzhang versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing AT yuehao versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing AT jingjingchang versatileoptoelectronicmemristorbasedonwidebandgapga2o3forartificialsynapsesandneuromorphiccomputing |