Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing

Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing

Abstract Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception. They hold great promise in neuromorphic visual systems (NVs). This study introduces the amorphous wide-bandgap Ga2O3 photoelectric synaptic memristor, which achieves 3-bit data storage thro...

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Main Authors: Dongsheng Cui, Mengjiao Pei, Zhenhua Lin, Hong Zhang, Mengyang Kang, Yifei Wang, Xiangxiang Gao, Jie Su, Jinshui Miao, Yun Li, Jincheng Zhang, Yue Hao, Jingjing Chang
Format: Article
Language:English
Published: Nature Publishing Group 2025-04-01
Series:Light: Science & Applications
Online Access:https://doi.org/10.1038/s41377-025-01773-6
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Summary:Abstract Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception. They hold great promise in neuromorphic visual systems (NVs). This study introduces the amorphous wide-bandgap Ga2O3 photoelectric synaptic memristor, which achieves 3-bit data storage through the adjustment of current compliance (I cc) and the utilization of variable ultraviolet (UV-254 nm) light intensities. The “AND” and “OR” logic gates in memristor-aided logic (MAGIC) are implemented by utilizing voltage polarity and UV light as input signals. The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation (PPF), spike-intensity dependent plasticity (SIDP), spike-number dependent plasticity (SNDP), spike-time dependent plasticity (STDP), spike-frequency dependent plasticity (SFDP) and the learning experience behavior. Finally, when integrated into an artificial neural network (ANN), the Ag/Ga2O3/Pt memristive device mimicked optical pulse potentiation and electrical pulse depression with high pattern accuracy (90.7%). The single memristive cells with multifunctional features are promising candidates for optoelectronic memory storage, neuromorphic computing, and artificial visual perception applications.
ISSN:2047-7538

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