CUSTOM RELAXATION INDUCED IMPURITY PHOTOCONDUCTIVITY IN THE UNITED AII BVI and AIII BV
Two types of non-standard relaxation induced impurity photoconductivity (IIP) observed in photoconductors CdS, ZnSe, GaAs and others, depending on the kinetic characteristics of the traps are described. In one case, at the stage of post flashing monotonic decay which is typical for relaxation associ...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
Dagestan State Technical University
2016-07-01
|
| Series: | Вестник Дагестанского государственного технического университета: Технические науки |
| Subjects: | |
| Online Access: | https://vestnik.dgtu.ru/jour/article/view/83 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849411538985680896 |
|---|---|
| author | L. B. Atlukhanova F. S. Gabibov M. A. Rizakhanov |
| author_facet | L. B. Atlukhanova F. S. Gabibov M. A. Rizakhanov |
| author_sort | L. B. Atlukhanova |
| collection | DOAJ |
| description | Two types of non-standard relaxation induced impurity photoconductivity (IIP) observed in photoconductors CdS, ZnSe, GaAs and others, depending on the kinetic characteristics of the traps are described. In one case, at the stage of post flashing monotonic decay which is typical for relaxation associated with slow traps (the ratio of the speed of the electron capture to the recombination rate (R << 1), the photo response is experiencing vibrations of low frequency (f =0.03-0.3Hz). Relaxation of the second type characterized by rapid photoelectric traps (R >> 1): measurement alternating signal (f > 20 Hz) relaxation curves take the form of curves usual impurity photoconductivity. Electronic processes responsible for relaxation of non-standard IIP are analyzed. For example, fast-centers, which include the characteristic AIIBVI donor Agi0, for the first time in semiconductors experimentally, investigated the dependence of the cross section of electron capture by traps energy released during localization. |
| format | Article |
| id | doaj-art-c3da636b9aae4407abff44e458a602b1 |
| institution | Kabale University |
| issn | 2073-6185 2542-095X |
| language | Russian |
| publishDate | 2016-07-01 |
| publisher | Dagestan State Technical University |
| record_format | Article |
| series | Вестник Дагестанского государственного технического университета: Технические науки |
| spelling | doaj-art-c3da636b9aae4407abff44e458a602b12025-08-20T03:34:44ZrusDagestan State Technical UniversityВестник Дагестанского государственного технического университета: Технические науки2073-61852542-095X2016-07-01401152210.21822/2073-6185-2016-40-1-15-2282CUSTOM RELAXATION INDUCED IMPURITY PHOTOCONDUCTIVITY IN THE UNITED AII BVI and AIII BVL. B. AtlukhanovaF. S. GabibovM. A. RizakhanovTwo types of non-standard relaxation induced impurity photoconductivity (IIP) observed in photoconductors CdS, ZnSe, GaAs and others, depending on the kinetic characteristics of the traps are described. In one case, at the stage of post flashing monotonic decay which is typical for relaxation associated with slow traps (the ratio of the speed of the electron capture to the recombination rate (R << 1), the photo response is experiencing vibrations of low frequency (f =0.03-0.3Hz). Relaxation of the second type characterized by rapid photoelectric traps (R >> 1): measurement alternating signal (f > 20 Hz) relaxation curves take the form of curves usual impurity photoconductivity. Electronic processes responsible for relaxation of non-standard IIP are analyzed. For example, fast-centers, which include the characteristic AIIBVI donor Agi0, for the first time in semiconductors experimentally, investigated the dependence of the cross section of electron capture by traps energy released during localization.https://vestnik.dgtu.ru/jour/article/view/83the induced photoconductivityelectronic trapcenter of recombinationionising energysection of captureoptically an active trapphotoionizationmacroinhomogeneities |
| spellingShingle | L. B. Atlukhanova F. S. Gabibov M. A. Rizakhanov CUSTOM RELAXATION INDUCED IMPURITY PHOTOCONDUCTIVITY IN THE UNITED AII BVI and AIII BV Вестник Дагестанского государственного технического университета: Технические науки the induced photoconductivity electronic trap center of recombination ionising energy section of capture optically an active trap photoionization macroinhomogeneities |
| title | CUSTOM RELAXATION INDUCED IMPURITY PHOTOCONDUCTIVITY IN THE UNITED AII BVI and AIII BV |
| title_full | CUSTOM RELAXATION INDUCED IMPURITY PHOTOCONDUCTIVITY IN THE UNITED AII BVI and AIII BV |
| title_fullStr | CUSTOM RELAXATION INDUCED IMPURITY PHOTOCONDUCTIVITY IN THE UNITED AII BVI and AIII BV |
| title_full_unstemmed | CUSTOM RELAXATION INDUCED IMPURITY PHOTOCONDUCTIVITY IN THE UNITED AII BVI and AIII BV |
| title_short | CUSTOM RELAXATION INDUCED IMPURITY PHOTOCONDUCTIVITY IN THE UNITED AII BVI and AIII BV |
| title_sort | custom relaxation induced impurity photoconductivity in the united aii bvi and aiii bv |
| topic | the induced photoconductivity electronic trap center of recombination ionising energy section of capture optically an active trap photoionization macroinhomogeneities |
| url | https://vestnik.dgtu.ru/jour/article/view/83 |
| work_keys_str_mv | AT lbatlukhanova customrelaxationinducedimpurityphotoconductivityintheunitedaiibviandaiiibv AT fsgabibov customrelaxationinducedimpurityphotoconductivityintheunitedaiibviandaiiibv AT marizakhanov customrelaxationinducedimpurityphotoconductivityintheunitedaiibviandaiiibv |