Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer
In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed at the interface between the SOI layer and the buri...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/762498 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!