Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer
In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed at the interface between the SOI layer and the buri...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/762498 |
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| _version_ | 1849685356949012480 |
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| author | Jingjing Jin Shengdong Hu Yinhui Chen Kaizhou Tan Jun Luo Feng Zhou Zongze Chen Ye Huang |
| author_facet | Jingjing Jin Shengdong Hu Yinhui Chen Kaizhou Tan Jun Luo Feng Zhou Zongze Chen Ye Huang |
| author_sort | Jingjing Jin |
| collection | DOAJ |
| description | In order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed at the interface between the SOI layer and the buried-oxide (BOX) layer (LVID SOI) is researched. Its breakdown mechanism is investigated theoretically, and its structure parameters are optimized and analyzed by 2D simulation software MEDICI. In the high voltage blocking state, the high concentration ionized donors in the depleted LVID make the surface electric field of SOI layer (ES) more uniform and enhance the electric field of BOX layer (EI), which can prevent the lateral premature breakdown and result in a higher BV. Compared with the conventional uniformly doped (UD) SOI LDMOS, EI of the optimized LVID SOI LDMOS is enhanced by 79% from 119 V/μm to 213 V/μm, and BV is increased by 33.4% from 169 V to 227 V. Simulations indicate that the method of LVID profile can significantly improve breakdown voltage for the SOI LDMOS. |
| format | Article |
| id | doaj-art-c3cd0b5e11504bef93f5f0c35e158ba4 |
| institution | DOAJ |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-c3cd0b5e11504bef93f5f0c35e158ba42025-08-20T03:23:11ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242015-01-01201510.1155/2015/762498762498Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide LayerJingjing Jin0Shengdong Hu1Yinhui Chen2Kaizhou Tan3Jun Luo4Feng Zhou5Zongze Chen6Ye Huang7College of Communication Engineering, Chongqing University, Chongqing 400044, ChinaCollege of Communication Engineering, Chongqing University, Chongqing 400044, ChinaCollege of Communication Engineering, Chongqing University, Chongqing 400044, ChinaNational Laboratory of Analogue Integrated Circuits, No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing 400060, ChinaNational Laboratory of Analogue Integrated Circuits, No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing 400060, ChinaCollege of Communication Engineering, Chongqing University, Chongqing 400044, ChinaCollege of Communication Engineering, Chongqing University, Chongqing 400044, ChinaCollege of Communication Engineering, Chongqing University, Chongqing 400044, ChinaIn order to achieve a high breakdown voltage (BV) for the SOI (Silicon-On-Insulator) power device in high voltage ICs, a novel high voltage n-channel lateral double-diffused MOS (LDMOS) with a lateral variable interface doping profile (LVID) placed at the interface between the SOI layer and the buried-oxide (BOX) layer (LVID SOI) is researched. Its breakdown mechanism is investigated theoretically, and its structure parameters are optimized and analyzed by 2D simulation software MEDICI. In the high voltage blocking state, the high concentration ionized donors in the depleted LVID make the surface electric field of SOI layer (ES) more uniform and enhance the electric field of BOX layer (EI), which can prevent the lateral premature breakdown and result in a higher BV. Compared with the conventional uniformly doped (UD) SOI LDMOS, EI of the optimized LVID SOI LDMOS is enhanced by 79% from 119 V/μm to 213 V/μm, and BV is increased by 33.4% from 169 V to 227 V. Simulations indicate that the method of LVID profile can significantly improve breakdown voltage for the SOI LDMOS.http://dx.doi.org/10.1155/2015/762498 |
| spellingShingle | Jingjing Jin Shengdong Hu Yinhui Chen Kaizhou Tan Jun Luo Feng Zhou Zongze Chen Ye Huang Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer Advances in Condensed Matter Physics |
| title | Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer |
| title_full | Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer |
| title_fullStr | Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer |
| title_full_unstemmed | Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer |
| title_short | Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer |
| title_sort | improving breakdown voltage for a novel soi ldmos with a lateral variable doping profile on the top interface of the buried oxide layer |
| url | http://dx.doi.org/10.1155/2015/762498 |
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