Jin, J., Hu, S., Chen, Y., Tan, K., Luo, J., Zhou, F., . . . Huang, Y. Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer. Wiley.
Chicago Style (17th ed.) CitationJin, Jingjing, Shengdong Hu, Yinhui Chen, Kaizhou Tan, Jun Luo, Feng Zhou, Zongze Chen, and Ye Huang. Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer. Wiley.
MLA (9th ed.) CitationJin, Jingjing, et al. Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer. Wiley.
Warning: These citations may not always be 100% accurate.