Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Slot Waveguide
Compact high-performance electro-optic (EO) modulators are key elements for optical communications. An electro-absorption modulator is theoretically designed. Due to the introduction of graphene film over the silicon slot waveguide, the modulation efficiency is strongly improved. The effect of waveg...
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| Format: | Article |
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IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8720015/ |
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| author | Lanting Ji Daming Zhang Yan Xu Yang Gao Chi Wu Xibin Wang Zhiyong Li Xiaoqiang Sun |
| author_facet | Lanting Ji Daming Zhang Yan Xu Yang Gao Chi Wu Xibin Wang Zhiyong Li Xiaoqiang Sun |
| author_sort | Lanting Ji |
| collection | DOAJ |
| description | Compact high-performance electro-optic (EO) modulators are key elements for optical communications. An electro-absorption modulator is theoretically designed. Due to the introduction of graphene film over the silicon slot waveguide, the modulation efficiency is strongly improved. The effect of waveguide dimensions, dielectric insulator thickness, and carrier mobility on performances of the proposed EO modulator have been comprehensively investigated. For the 120-<italic>μ</italic>m-long graphene-on-silicon waveguide modulator, the extinction ratio 28 dB and insertion loss 1.28 dB can be obtained at 1550 nm when drive voltage is 1.91 and 0.59 V, respectively. The 3 dB bandwidth of 117 GHz can be obtained at a small power consumption of 212 fJ/bit. The proposed modulator possesses a high figure-of-merit of 20.5. Its benefits of small size, power saving, and process compatible promises possible applications in on-chip signal processing. |
| format | Article |
| id | doaj-art-c3c1f99b5d514c4b824d9d31399f52d2 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-c3c1f99b5d514c4b824d9d31399f52d22025-08-20T03:32:46ZengIEEEIEEE Photonics Journal1943-06552019-01-0111311110.1109/JPHOT.2019.29183148720015Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Slot WaveguideLanting Ji0Daming Zhang1https://orcid.org/0000-0002-5651-8699Yan Xu2Yang Gao3https://orcid.org/0000-0001-7649-7146Chi Wu4Xibin Wang5https://orcid.org/0000-0003-2500-7682Zhiyong Li6Xiaoqiang Sun7https://orcid.org/0000-0002-7055-1305State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, ChinaInstitute of Marine Science and Technology, Shandong University, Qingdao, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, ChinaCompact high-performance electro-optic (EO) modulators are key elements for optical communications. An electro-absorption modulator is theoretically designed. Due to the introduction of graphene film over the silicon slot waveguide, the modulation efficiency is strongly improved. The effect of waveguide dimensions, dielectric insulator thickness, and carrier mobility on performances of the proposed EO modulator have been comprehensively investigated. For the 120-<italic>μ</italic>m-long graphene-on-silicon waveguide modulator, the extinction ratio 28 dB and insertion loss 1.28 dB can be obtained at 1550 nm when drive voltage is 1.91 and 0.59 V, respectively. The 3 dB bandwidth of 117 GHz can be obtained at a small power consumption of 212 fJ/bit. The proposed modulator possesses a high figure-of-merit of 20.5. Its benefits of small size, power saving, and process compatible promises possible applications in on-chip signal processing.https://ieeexplore.ieee.org/document/8720015/Waveguide modulatorsintegrated optics deviceselectro-optical devicesgraphene |
| spellingShingle | Lanting Ji Daming Zhang Yan Xu Yang Gao Chi Wu Xibin Wang Zhiyong Li Xiaoqiang Sun Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Slot Waveguide IEEE Photonics Journal Waveguide modulators integrated optics devices electro-optical devices graphene |
| title | Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Slot Waveguide |
| title_full | Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Slot Waveguide |
| title_fullStr | Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Slot Waveguide |
| title_full_unstemmed | Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Slot Waveguide |
| title_short | Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Slot Waveguide |
| title_sort | design of an electro absorption modulator based on graphene on silicon slot waveguide |
| topic | Waveguide modulators integrated optics devices electro-optical devices graphene |
| url | https://ieeexplore.ieee.org/document/8720015/ |
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