Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices
Metal-oxide-semiconductor (MOS) capacitors with tri-layer structure consisting of rf magnetron sputtered grown germanium (Ge) nanocrystals (NCs) and silicon dioxide (SiO2) layers sandwiched between thermally grown tunnel and sputtered grown cap oxide layers of SiO2 were fabricated on p-Si substrates...
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| Format: | Article |
| Language: | English |
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Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0878-0883.pdf |
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| author | A. Bag R. Aluguri S.K. Ray |
| author_facet | A. Bag R. Aluguri S.K. Ray |
| author_sort | A. Bag |
| collection | DOAJ |
| description | Metal-oxide-semiconductor (MOS) capacitors with tri-layer structure consisting of rf magnetron sputtered grown germanium (Ge) nanocrystals (NCs) and silicon dioxide (SiO2) layers sandwiched between thermally grown tunnel and sputtered grown cap oxide layers of SiO2 were fabricated on p-Si substrates. Plane view transmission electron micrographs revealed the formation of spherically shaped and uniformly distributed Ge NCs. The optical and electronic characteristics of tri-layer structures were studied through photoluminescence (PL) spectroscopy and capacitance-voltage (C-V) measurements, respectively. Frequency dependent electrical properties of the structures have been studied. The optical emission characteristics support the confinement of the carriers in Ge NCs embedded in oxide matrices. An anticlockwise hysteresis in C-V characteristics suggests electron injection and trapping in Ge NCs. |
| format | Article |
| id | doaj-art-c3bc98fff9cc45c69f806e64c39c36db |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-c3bc98fff9cc45c69f806e64c39c36db2025-08-20T02:02:29ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722011-01-0131878883Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory DevicesA. BagR. AluguriS.K. RayMetal-oxide-semiconductor (MOS) capacitors with tri-layer structure consisting of rf magnetron sputtered grown germanium (Ge) nanocrystals (NCs) and silicon dioxide (SiO2) layers sandwiched between thermally grown tunnel and sputtered grown cap oxide layers of SiO2 were fabricated on p-Si substrates. Plane view transmission electron micrographs revealed the formation of spherically shaped and uniformly distributed Ge NCs. The optical and electronic characteristics of tri-layer structures were studied through photoluminescence (PL) spectroscopy and capacitance-voltage (C-V) measurements, respectively. Frequency dependent electrical properties of the structures have been studied. The optical emission characteristics support the confinement of the carriers in Ge NCs embedded in oxide matrices. An anticlockwise hysteresis in C-V characteristics suggests electron injection and trapping in Ge NCs.http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0878-0883.pdfGermanium nanocrystalsFloating gate memoryMetal-oxide-semiconductorPhotoluminescence spectrosopyFlat band voltage. |
| spellingShingle | A. Bag R. Aluguri S.K. Ray Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices Журнал нано- та електронної фізики Germanium nanocrystals Floating gate memory Metal-oxide-semiconductor Photoluminescence spectrosopy Flat band voltage. |
| title | Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices |
| title_full | Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices |
| title_fullStr | Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices |
| title_full_unstemmed | Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices |
| title_short | Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices |
| title_sort | germanium nanocrystals embedded in silicon dioxide for floating gate memory devices |
| topic | Germanium nanocrystals Floating gate memory Metal-oxide-semiconductor Photoluminescence spectrosopy Flat band voltage. |
| url | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0878-0883.pdf |
| work_keys_str_mv | AT abag germaniumnanocrystalsembeddedinsilicondioxideforfloatinggatememorydevices AT raluguri germaniumnanocrystalsembeddedinsilicondioxideforfloatinggatememorydevices AT skray germaniumnanocrystalsembeddedinsilicondioxideforfloatinggatememorydevices |