First-principles study of structural, elastic, electronic, transport properties, and dielectric breakdown of Cs2Te photocathode

Abstract The pursuit to operate photocathodes at high accelerating gradients to increase brightness of electron beams is gaining interests within the accelerator community, particularly for applications such as free electron lasers (FEL) and compact accelerators. Cesium telluride (Cs2Te) is a widely...

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Main Authors: Gaoxue Wang, Jinlin Zhang, Chengkun Huang, Dimitre A. Dimitrov, Anna Alexander, Evgenya I. Simakov
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-024-85054-z
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author Gaoxue Wang
Jinlin Zhang
Chengkun Huang
Dimitre A. Dimitrov
Anna Alexander
Evgenya I. Simakov
author_facet Gaoxue Wang
Jinlin Zhang
Chengkun Huang
Dimitre A. Dimitrov
Anna Alexander
Evgenya I. Simakov
author_sort Gaoxue Wang
collection DOAJ
description Abstract The pursuit to operate photocathodes at high accelerating gradients to increase brightness of electron beams is gaining interests within the accelerator community, particularly for applications such as free electron lasers (FEL) and compact accelerators. Cesium telluride (Cs2Te) is a widely used photocathode material and it is presumed to offer resilience to higher gradients because of its wider band gap compared to other semiconductors. Despite its advantages, crucial material properties of Cs2Te remain largely unknown both in theory and experiments. In this study, we employ first-principles calculations to provide detailed structural, elastic, electronic and transport properties of Cs2Te. It is found that Cs2Te has an intrinsic mobility of 20 cm2/Vs for electrons and 2.0 cm2/Vs for holes at room temperature. The low mobility is primarily limited by the strong polar optical phonon scattering. Cs2Te also exhibits ultralow lattice thermal conductivity of 0.2 W/(m*K) at room temperature. Based on the energy gain/loss balance under external field and electron–phonon scattering, we predict that Cs2Te has a dielectric breakdown field in the range from ~ 60 to ~ 132 MV/m at room temperature dependent on the doping level of Cs2Te. Our results are crucial to advance the understanding of applicability of Cs2Te photocathodes for high-gradient operation.
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spelling doaj-art-c39e53e6847744b09918143c479eef922025-01-26T12:31:28ZengNature PortfolioScientific Reports2045-23222025-01-0115111110.1038/s41598-024-85054-zFirst-principles study of structural, elastic, electronic, transport properties, and dielectric breakdown of Cs2Te photocathodeGaoxue Wang0Jinlin Zhang1Chengkun Huang2Dimitre A. Dimitrov3Anna Alexander4Evgenya I. Simakov5Theoretical Division, Los Alamos National LaboratoryAccelerator Operations and Technology Division, Los Alamos National LaboratoryTheoretical Division, Los Alamos National LaboratoryAccelerator Operations and Technology Division, Los Alamos National LaboratoryAccelerator Operations and Technology Division, Los Alamos National LaboratoryAccelerator Operations and Technology Division, Los Alamos National LaboratoryAbstract The pursuit to operate photocathodes at high accelerating gradients to increase brightness of electron beams is gaining interests within the accelerator community, particularly for applications such as free electron lasers (FEL) and compact accelerators. Cesium telluride (Cs2Te) is a widely used photocathode material and it is presumed to offer resilience to higher gradients because of its wider band gap compared to other semiconductors. Despite its advantages, crucial material properties of Cs2Te remain largely unknown both in theory and experiments. In this study, we employ first-principles calculations to provide detailed structural, elastic, electronic and transport properties of Cs2Te. It is found that Cs2Te has an intrinsic mobility of 20 cm2/Vs for electrons and 2.0 cm2/Vs for holes at room temperature. The low mobility is primarily limited by the strong polar optical phonon scattering. Cs2Te also exhibits ultralow lattice thermal conductivity of 0.2 W/(m*K) at room temperature. Based on the energy gain/loss balance under external field and electron–phonon scattering, we predict that Cs2Te has a dielectric breakdown field in the range from ~ 60 to ~ 132 MV/m at room temperature dependent on the doping level of Cs2Te. Our results are crucial to advance the understanding of applicability of Cs2Te photocathodes for high-gradient operation.https://doi.org/10.1038/s41598-024-85054-z
spellingShingle Gaoxue Wang
Jinlin Zhang
Chengkun Huang
Dimitre A. Dimitrov
Anna Alexander
Evgenya I. Simakov
First-principles study of structural, elastic, electronic, transport properties, and dielectric breakdown of Cs2Te photocathode
Scientific Reports
title First-principles study of structural, elastic, electronic, transport properties, and dielectric breakdown of Cs2Te photocathode
title_full First-principles study of structural, elastic, electronic, transport properties, and dielectric breakdown of Cs2Te photocathode
title_fullStr First-principles study of structural, elastic, electronic, transport properties, and dielectric breakdown of Cs2Te photocathode
title_full_unstemmed First-principles study of structural, elastic, electronic, transport properties, and dielectric breakdown of Cs2Te photocathode
title_short First-principles study of structural, elastic, electronic, transport properties, and dielectric breakdown of Cs2Te photocathode
title_sort first principles study of structural elastic electronic transport properties and dielectric breakdown of cs2te photocathode
url https://doi.org/10.1038/s41598-024-85054-z
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