Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography
Abstract As a basic component of the versatile semiconductor devices, metal oxides play a critical role in modern electronic information industry. However, ultra-high precision nanopatterning of metal oxides often involves multi-step lithography and transfer process, which is time-consuming and cost...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-10-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-52929-8 |
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| author | Chun Cao Xianmeng Xia Xiaoming Shen Xiaobing Wang Zhenyao Yang Qiulan Liu Chenliang Ding Dazhao Zhu Cuifang Kuang Xu Liu |
| author_facet | Chun Cao Xianmeng Xia Xiaoming Shen Xiaobing Wang Zhenyao Yang Qiulan Liu Chenliang Ding Dazhao Zhu Cuifang Kuang Xu Liu |
| author_sort | Chun Cao |
| collection | DOAJ |
| description | Abstract As a basic component of the versatile semiconductor devices, metal oxides play a critical role in modern electronic information industry. However, ultra-high precision nanopatterning of metal oxides often involves multi-step lithography and transfer process, which is time-consuming and costly. Here, we report a strategy, using metal-organic compounds as solid precursor photoresist for multi-photon lithography and post-sintering, to realize ultra-high precision additive manufacturing of metal oxides. As a result, we gain metal oxides including ZnO, CuO and ZrO2 with a critical dimension of 35 nm, which sets a benchmark for additive manufacturing of metal oxides. Besides, atomic doping can be easily accomplished by including the target element in precursor photoresist, and heterogeneous structures can also be created by multiple multi-photon lithography, allowing this strategy to accommodate the requirements of various semiconductor devices. For instance, we fabricate an ZnO photodetector by the proposed strategy. |
| format | Article |
| id | doaj-art-c35584bd783c4d5fbedb337f909d04f3 |
| institution | OA Journals |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-10-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-c35584bd783c4d5fbedb337f909d04f32025-08-20T02:11:21ZengNature PortfolioNature Communications2041-17232024-10-0115111110.1038/s41467-024-52929-8Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithographyChun Cao0Xianmeng Xia1Xiaoming Shen2Xiaobing Wang3Zhenyao Yang4Qiulan Liu5Chenliang Ding6Dazhao Zhu7Cuifang Kuang8Xu Liu9School of Mechanical Engineering, Hangzhou Dianzi UniversityResearch Center for Astronomical Computing, Zhejiang LabZJU-Hangzhou Global Scientific and Technological Innovation CenterResearch Center for Astronomical Computing, Zhejiang LabResearch Center for Astronomical Computing, Zhejiang LabState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang UniversityState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang UniversityState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang UniversityZJU-Hangzhou Global Scientific and Technological Innovation CenterZJU-Hangzhou Global Scientific and Technological Innovation CenterAbstract As a basic component of the versatile semiconductor devices, metal oxides play a critical role in modern electronic information industry. However, ultra-high precision nanopatterning of metal oxides often involves multi-step lithography and transfer process, which is time-consuming and costly. Here, we report a strategy, using metal-organic compounds as solid precursor photoresist for multi-photon lithography and post-sintering, to realize ultra-high precision additive manufacturing of metal oxides. As a result, we gain metal oxides including ZnO, CuO and ZrO2 with a critical dimension of 35 nm, which sets a benchmark for additive manufacturing of metal oxides. Besides, atomic doping can be easily accomplished by including the target element in precursor photoresist, and heterogeneous structures can also be created by multiple multi-photon lithography, allowing this strategy to accommodate the requirements of various semiconductor devices. For instance, we fabricate an ZnO photodetector by the proposed strategy.https://doi.org/10.1038/s41467-024-52929-8 |
| spellingShingle | Chun Cao Xianmeng Xia Xiaoming Shen Xiaobing Wang Zhenyao Yang Qiulan Liu Chenliang Ding Dazhao Zhu Cuifang Kuang Xu Liu Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography Nature Communications |
| title | Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography |
| title_full | Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography |
| title_fullStr | Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography |
| title_full_unstemmed | Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography |
| title_short | Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography |
| title_sort | ultra high precision nano additive manufacturing of metal oxide semiconductors via multi photon lithography |
| url | https://doi.org/10.1038/s41467-024-52929-8 |
| work_keys_str_mv | AT chuncao ultrahighprecisionnanoadditivemanufacturingofmetaloxidesemiconductorsviamultiphotonlithography AT xianmengxia ultrahighprecisionnanoadditivemanufacturingofmetaloxidesemiconductorsviamultiphotonlithography AT xiaomingshen ultrahighprecisionnanoadditivemanufacturingofmetaloxidesemiconductorsviamultiphotonlithography AT xiaobingwang ultrahighprecisionnanoadditivemanufacturingofmetaloxidesemiconductorsviamultiphotonlithography AT zhenyaoyang ultrahighprecisionnanoadditivemanufacturingofmetaloxidesemiconductorsviamultiphotonlithography AT qiulanliu ultrahighprecisionnanoadditivemanufacturingofmetaloxidesemiconductorsviamultiphotonlithography AT chenliangding ultrahighprecisionnanoadditivemanufacturingofmetaloxidesemiconductorsviamultiphotonlithography AT dazhaozhu ultrahighprecisionnanoadditivemanufacturingofmetaloxidesemiconductorsviamultiphotonlithography AT cuifangkuang ultrahighprecisionnanoadditivemanufacturingofmetaloxidesemiconductorsviamultiphotonlithography AT xuliu ultrahighprecisionnanoadditivemanufacturingofmetaloxidesemiconductorsviamultiphotonlithography |