A novel 8T SRAM cell using PFC and PPC VS-CNTFET transistor
Abstract The 8T static random-access memory (SRAM) cell using carbon nanotube technology, positive feedback, and dynamic supply voltage scaling are presented in this work. Positive feedback strengthens the feedback loop and enhances the noise margin making SRAM cells less susceptible to disturbance...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2025-01-01
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| Series: | Journal of Engineering and Applied Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s44147-025-00579-y |
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