Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications
Abstract Color centers in the O-band (1260–1360 nm) are crucial for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been thoroughly explored in silicon hosts as spin-photon interfaces. This study ex...
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Nature Portfolio
2025-01-01
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Series: | Communications Physics |
Online Access: | https://doi.org/10.1038/s42005-025-01954-0 |
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author | Murat Can Sarihan Jiahui Huang Jin Ho Kang Cody Fan Wei Liu Khalifa M. Azizur-Rahman Baolai Liang Chee Wei Wong |
author_facet | Murat Can Sarihan Jiahui Huang Jin Ho Kang Cody Fan Wei Liu Khalifa M. Azizur-Rahman Baolai Liang Chee Wei Wong |
author_sort | Murat Can Sarihan |
collection | DOAJ |
description | Abstract Color centers in the O-band (1260–1360 nm) are crucial for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been thoroughly explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band color centers in silicon for high-fidelity spin-photon interfaces: T and *Cu (transition metal) centers. During T center generation process, we observed the formation and dissolution of other color centers, including the copper-silver related centers with a doublet line around 1312 nm (* $${{{\rm{Cu}}}}_{n}^{0}$$ Cu n 0 ), near the optical fiber zero dispersion wavelength (around 1310 nm). We then investigated the photophysics of both T and *Cu centers, focusing on their emission spectra and spin properties. The * $${{{\rm{Cu}}}}_{0}^{0}$$ Cu 0 0 line under a 0.5 T magnetic field demonstrated a 25% broadening, potentially due to spin degeneracy, suggesting that this center can be a promising alternative to T centers. |
format | Article |
id | doaj-art-c2b1c73421764753ba6ff479402f1cf2 |
institution | Kabale University |
issn | 2399-3650 |
language | English |
publishDate | 2025-01-01 |
publisher | Nature Portfolio |
record_format | Article |
series | Communications Physics |
spelling | doaj-art-c2b1c73421764753ba6ff479402f1cf22025-02-02T12:28:03ZengNature PortfolioCommunications Physics2399-36502025-01-018111110.1038/s42005-025-01954-0Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communicationsMurat Can Sarihan0Jiahui Huang1Jin Ho Kang2Cody Fan3Wei Liu4Khalifa M. Azizur-Rahman5Baolai Liang6Chee Wei Wong7Department of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaAbstract Color centers in the O-band (1260–1360 nm) are crucial for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been thoroughly explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band color centers in silicon for high-fidelity spin-photon interfaces: T and *Cu (transition metal) centers. During T center generation process, we observed the formation and dissolution of other color centers, including the copper-silver related centers with a doublet line around 1312 nm (* $${{{\rm{Cu}}}}_{n}^{0}$$ Cu n 0 ), near the optical fiber zero dispersion wavelength (around 1310 nm). We then investigated the photophysics of both T and *Cu centers, focusing on their emission spectra and spin properties. The * $${{{\rm{Cu}}}}_{0}^{0}$$ Cu 0 0 line under a 0.5 T magnetic field demonstrated a 25% broadening, potentially due to spin degeneracy, suggesting that this center can be a promising alternative to T centers.https://doi.org/10.1038/s42005-025-01954-0 |
spellingShingle | Murat Can Sarihan Jiahui Huang Jin Ho Kang Cody Fan Wei Liu Khalifa M. Azizur-Rahman Baolai Liang Chee Wei Wong Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications Communications Physics |
title | Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications |
title_full | Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications |
title_fullStr | Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications |
title_full_unstemmed | Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications |
title_short | Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications |
title_sort | photophysics of o band and transition metal color centers in monolithic silicon for quantum communications |
url | https://doi.org/10.1038/s42005-025-01954-0 |
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