Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications

Abstract Color centers in the O-band (1260–1360 nm) are crucial for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been thoroughly explored in silicon hosts as spin-photon interfaces. This study ex...

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Main Authors: Murat Can Sarihan, Jiahui Huang, Jin Ho Kang, Cody Fan, Wei Liu, Khalifa M. Azizur-Rahman, Baolai Liang, Chee Wei Wong
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Communications Physics
Online Access:https://doi.org/10.1038/s42005-025-01954-0
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author Murat Can Sarihan
Jiahui Huang
Jin Ho Kang
Cody Fan
Wei Liu
Khalifa M. Azizur-Rahman
Baolai Liang
Chee Wei Wong
author_facet Murat Can Sarihan
Jiahui Huang
Jin Ho Kang
Cody Fan
Wei Liu
Khalifa M. Azizur-Rahman
Baolai Liang
Chee Wei Wong
author_sort Murat Can Sarihan
collection DOAJ
description Abstract Color centers in the O-band (1260–1360 nm) are crucial for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been thoroughly explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band color centers in silicon for high-fidelity spin-photon interfaces: T and *Cu (transition metal) centers. During T center generation process, we observed the formation and dissolution of other color centers, including the copper-silver related centers with a doublet line around 1312 nm (* $${{{\rm{Cu}}}}_{n}^{0}$$ Cu n 0 ), near the optical fiber zero dispersion wavelength (around 1310 nm). We then investigated the photophysics of both T and *Cu centers, focusing on their emission spectra and spin properties. The * $${{{\rm{Cu}}}}_{0}^{0}$$ Cu 0 0 line under a 0.5 T magnetic field demonstrated a 25% broadening, potentially due to spin degeneracy, suggesting that this center can be a promising alternative to T centers.
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issn 2399-3650
language English
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series Communications Physics
spelling doaj-art-c2b1c73421764753ba6ff479402f1cf22025-02-02T12:28:03ZengNature PortfolioCommunications Physics2399-36502025-01-018111110.1038/s42005-025-01954-0Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communicationsMurat Can Sarihan0Jiahui Huang1Jin Ho Kang2Cody Fan3Wei Liu4Khalifa M. Azizur-Rahman5Baolai Liang6Chee Wei Wong7Department of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaDepartment of Electrical and Computer Engineering, University of CaliforniaAbstract Color centers in the O-band (1260–1360 nm) are crucial for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been thoroughly explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band color centers in silicon for high-fidelity spin-photon interfaces: T and *Cu (transition metal) centers. During T center generation process, we observed the formation and dissolution of other color centers, including the copper-silver related centers with a doublet line around 1312 nm (* $${{{\rm{Cu}}}}_{n}^{0}$$ Cu n 0 ), near the optical fiber zero dispersion wavelength (around 1310 nm). We then investigated the photophysics of both T and *Cu centers, focusing on their emission spectra and spin properties. The * $${{{\rm{Cu}}}}_{0}^{0}$$ Cu 0 0 line under a 0.5 T magnetic field demonstrated a 25% broadening, potentially due to spin degeneracy, suggesting that this center can be a promising alternative to T centers.https://doi.org/10.1038/s42005-025-01954-0
spellingShingle Murat Can Sarihan
Jiahui Huang
Jin Ho Kang
Cody Fan
Wei Liu
Khalifa M. Azizur-Rahman
Baolai Liang
Chee Wei Wong
Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications
Communications Physics
title Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications
title_full Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications
title_fullStr Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications
title_full_unstemmed Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications
title_short Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications
title_sort photophysics of o band and transition metal color centers in monolithic silicon for quantum communications
url https://doi.org/10.1038/s42005-025-01954-0
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