Electrophysical characteristics of initial and irradiated GаAsP LEDs structures
ight emitting diodes based on gallium arsenide-phosphide solid solutions were studied. Negative differential resistance regions were identified at lower temperatures T ≤ 130 K. Irradiation of diodes by electrons (E = 2 MeV) leads to the increase in the differential resistance, change in the contact...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2019-06-01
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| Series: | Ядерна фізика та енергетика |
| Subjects: | |
| Online Access: | http://jnpae.kinr.kiev.ua/20.2/html/20.2.0164.html |
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