Long-Term Analysis of Temperature and Current-Dependent Degradation in Green High-Power Light-Emitting Diodes
We report on the degradation dynamics and mechanisms of commercially available green high-power light-emitting diodes (LEDs) with a peak wavelength of 522 nm. The stress tests were carried out for up to 8800 hours with forward currents ranging from 350 mA to 1000 mA at junction temperatures between...
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2025-01-01
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| Online Access: | https://ieeexplore.ieee.org/document/11127023/ |
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| author | Alexander Herzog Matteo Buffolo Francesco Piva Simon Benkner Babak Zandi Jens Balasus Paul Myland Felix Wirth Willem D. van Driel Matteo Meneghini Tran Quoc Khanh |
| author_facet | Alexander Herzog Matteo Buffolo Francesco Piva Simon Benkner Babak Zandi Jens Balasus Paul Myland Felix Wirth Willem D. van Driel Matteo Meneghini Tran Quoc Khanh |
| author_sort | Alexander Herzog |
| collection | DOAJ |
| description | We report on the degradation dynamics and mechanisms of commercially available green high-power light-emitting diodes (LEDs) with a peak wavelength of 522 nm. The stress tests were carried out for up to 8800 hours with forward currents ranging from 350 mA to 1000 mA at junction temperatures between 86 C and 155 C. Two complementary test designs were used to isolate temperature- and current-driven effects. The results of the accelerated tests reveal the following key findings: 1.) A square-root–time-dependent loss in the quantum wells caused by the generation of point defects, leading to up to 90 % flux reduction within the first 500 hours at low forward currents. 2.) A logarithmic decay governed by defect-induced carrier-injection loss, evident above <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm {EQE,max}}$ </tex-math></inline-formula> and accompanied by a spectral red shift. 3.) A temperature-activated blue shift with an activation energy of <inline-formula> <tex-math notation="LaTeX">$E_{\mathrm {a}}$ </tex-math></inline-formula>=0.23 eV, indicating the coexistence of competing degradation mechanisms. The interplay between different mechanisms results in an enhanced device lifetime at higher stress temperatures and stands in contrast to previous findings reported in the literature. 4.) The isothermal stress test indicates a cubic acceleration of degradation with carrier density, implicating Auger-Meitner-generated hot electrons in defect formation. These insights provide guidance for mitigating reliability issues of green high-power LEDs in future devices. |
| format | Article |
| id | doaj-art-c28236109b684b6088b2b1dc7de535e2 |
| institution | Kabale University |
| issn | 2169-3536 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj-art-c28236109b684b6088b2b1dc7de535e22025-08-25T23:18:02ZengIEEEIEEE Access2169-35362025-01-011314584914586410.1109/ACCESS.2025.359979711127023Long-Term Analysis of Temperature and Current-Dependent Degradation in Green High-Power Light-Emitting DiodesAlexander Herzog0https://orcid.org/0000-0001-6011-2635Matteo Buffolo1https://orcid.org/0000-0002-9255-6457Francesco Piva2https://orcid.org/0000-0003-3620-5510Simon Benkner3https://orcid.org/0000-0003-0391-2040Babak Zandi4https://orcid.org/0000-0002-4291-4383Jens Balasus5Paul Myland6https://orcid.org/0000-0002-5654-837XFelix Wirth7Willem D. van Driel8https://orcid.org/0000-0001-8882-2508Matteo Meneghini9https://orcid.org/0000-0003-2421-505XTran Quoc Khanh10https://orcid.org/0000-0003-1828-2459Laboratory of Adaptive Lighting Systems and Visual Processing, Technische Universit’at Darmstadt, Darmstadt, GermanyDepartment of Information Engineering, University of Padova, Padua, ItalyDepartment of Information Engineering, University of Padova, Padua, ItalyLaboratory of Adaptive Lighting Systems and Visual Processing, Technische Universit’at Darmstadt, Darmstadt, GermanyLaboratory of Adaptive Lighting Systems and Visual Processing, Technische Universit’at Darmstadt, Darmstadt, GermanyLaboratory of Adaptive Lighting Systems and Visual Processing, Technische Universit’at Darmstadt, Darmstadt, GermanyLaboratory of Adaptive Lighting Systems and Visual Processing, Technische Universit’at Darmstadt, Darmstadt, GermanyLaboratory of Adaptive Lighting Systems and Visual Processing, Technische Universit’at Darmstadt, Darmstadt, GermanyDepartment of Microelectronics, Electronic Components, Technology and Materials (ECTM), Delft University of Technology, Delft, The NetherlandsDepartment of Information Engineering, University of Padova, Padua, ItalyLaboratory of Adaptive Lighting Systems and Visual Processing, Technische Universit’at Darmstadt, Darmstadt, GermanyWe report on the degradation dynamics and mechanisms of commercially available green high-power light-emitting diodes (LEDs) with a peak wavelength of 522 nm. The stress tests were carried out for up to 8800 hours with forward currents ranging from 350 mA to 1000 mA at junction temperatures between 86 C and 155 C. Two complementary test designs were used to isolate temperature- and current-driven effects. The results of the accelerated tests reveal the following key findings: 1.) A square-root–time-dependent loss in the quantum wells caused by the generation of point defects, leading to up to 90 % flux reduction within the first 500 hours at low forward currents. 2.) A logarithmic decay governed by defect-induced carrier-injection loss, evident above <inline-formula> <tex-math notation="LaTeX">$I_{\mathrm {EQE,max}}$ </tex-math></inline-formula> and accompanied by a spectral red shift. 3.) A temperature-activated blue shift with an activation energy of <inline-formula> <tex-math notation="LaTeX">$E_{\mathrm {a}}$ </tex-math></inline-formula>=0.23 eV, indicating the coexistence of competing degradation mechanisms. The interplay between different mechanisms results in an enhanced device lifetime at higher stress temperatures and stands in contrast to previous findings reported in the literature. 4.) The isothermal stress test indicates a cubic acceleration of degradation with carrier density, implicating Auger-Meitner-generated hot electrons in defect formation. These insights provide guidance for mitigating reliability issues of green high-power LEDs in future devices.https://ieeexplore.ieee.org/document/11127023/Light-emitting diode (LED)InGaNhigh-power LEDreliabilityaccelerated stress testgreen LEDs |
| spellingShingle | Alexander Herzog Matteo Buffolo Francesco Piva Simon Benkner Babak Zandi Jens Balasus Paul Myland Felix Wirth Willem D. van Driel Matteo Meneghini Tran Quoc Khanh Long-Term Analysis of Temperature and Current-Dependent Degradation in Green High-Power Light-Emitting Diodes IEEE Access Light-emitting diode (LED) InGaN high-power LED reliability accelerated stress test green LEDs |
| title | Long-Term Analysis of Temperature and Current-Dependent Degradation in Green High-Power Light-Emitting Diodes |
| title_full | Long-Term Analysis of Temperature and Current-Dependent Degradation in Green High-Power Light-Emitting Diodes |
| title_fullStr | Long-Term Analysis of Temperature and Current-Dependent Degradation in Green High-Power Light-Emitting Diodes |
| title_full_unstemmed | Long-Term Analysis of Temperature and Current-Dependent Degradation in Green High-Power Light-Emitting Diodes |
| title_short | Long-Term Analysis of Temperature and Current-Dependent Degradation in Green High-Power Light-Emitting Diodes |
| title_sort | long term analysis of temperature and current dependent degradation in green high power light emitting diodes |
| topic | Light-emitting diode (LED) InGaN high-power LED reliability accelerated stress test green LEDs |
| url | https://ieeexplore.ieee.org/document/11127023/ |
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