Electrons, Localization but no Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon
This article presents a unique study on the charge carrier transport in electrochemically anodized mesoporous silicon by combining macroscopic conductivity and thermopower measurements. Temperature‐dependent electrical conductivity measurements reveal a thermally activated transport in extended elec...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-04-01
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| Series: | Small Structures |
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| Online Access: | https://doi.org/10.1002/sstr.202400437 |
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| author | Tommy Hofmann Haider Haseeb Danny Kojda Natalia Gostkowska‐Lekner Klaus Habicht |
| author_facet | Tommy Hofmann Haider Haseeb Danny Kojda Natalia Gostkowska‐Lekner Klaus Habicht |
| author_sort | Tommy Hofmann |
| collection | DOAJ |
| description | This article presents a unique study on the charge carrier transport in electrochemically anodized mesoporous silicon by combining macroscopic conductivity and thermopower measurements. Temperature‐dependent electrical conductivity measurements reveal a thermally activated transport in extended electronic states. An intrinsic variation of the thermal activation energies from sample to sample upon apparent identical synthesis conditions is discussed in terms of microscopic disorder. In a detailed analysis of the activation energies, the existence of a disorder‐dependent mobility edge between localized and extended states in a band tail with exponential density‐of‐states becomes indispensable for understanding the microscopic transport mechanism. The observation of a Meyer–Neldel compensation rule for the conductivity between different samples is a direct consequence of this mobility edge. Temperature‐dependent thermopower measurements provide further, stringent proof for disorder‐dominated transport in extended states above the mobility edge and dispel an alternative explanation attempt for the Meyer–Neldel rule in mesoporous silicon based on multiphonon absorption upon charge carrier transport. |
| format | Article |
| id | doaj-art-c21db87655a24ff9a6f52d7e6f244cf0 |
| institution | DOAJ |
| issn | 2688-4062 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Structures |
| spelling | doaj-art-c21db87655a24ff9a6f52d7e6f244cf02025-08-20T03:08:50ZengWiley-VCHSmall Structures2688-40622025-04-0164n/an/a10.1002/sstr.202400437Electrons, Localization but no Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous SiliconTommy Hofmann0Haider Haseeb1Danny Kojda2Natalia Gostkowska‐Lekner3Klaus Habicht4Department Dynamics and Transport in Quantum Materials Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Hahn‐Meitner‐Platz 1 14109 Berlin GermanyDepartment Dynamics and Transport in Quantum Materials Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Hahn‐Meitner‐Platz 1 14109 Berlin GermanyDepartment Dynamics and Transport in Quantum Materials Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Hahn‐Meitner‐Platz 1 14109 Berlin GermanyDepartment Dynamics and Transport in Quantum Materials Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Hahn‐Meitner‐Platz 1 14109 Berlin GermanyDepartment Dynamics and Transport in Quantum Materials Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Hahn‐Meitner‐Platz 1 14109 Berlin GermanyThis article presents a unique study on the charge carrier transport in electrochemically anodized mesoporous silicon by combining macroscopic conductivity and thermopower measurements. Temperature‐dependent electrical conductivity measurements reveal a thermally activated transport in extended electronic states. An intrinsic variation of the thermal activation energies from sample to sample upon apparent identical synthesis conditions is discussed in terms of microscopic disorder. In a detailed analysis of the activation energies, the existence of a disorder‐dependent mobility edge between localized and extended states in a band tail with exponential density‐of‐states becomes indispensable for understanding the microscopic transport mechanism. The observation of a Meyer–Neldel compensation rule for the conductivity between different samples is a direct consequence of this mobility edge. Temperature‐dependent thermopower measurements provide further, stringent proof for disorder‐dominated transport in extended states above the mobility edge and dispel an alternative explanation attempt for the Meyer–Neldel rule in mesoporous silicon based on multiphonon absorption upon charge carrier transport.https://doi.org/10.1002/sstr.202400437disorderlocalizationmobility edgenanostructuresilicon |
| spellingShingle | Tommy Hofmann Haider Haseeb Danny Kojda Natalia Gostkowska‐Lekner Klaus Habicht Electrons, Localization but no Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon Small Structures disorder localization mobility edge nanostructure silicon |
| title | Electrons, Localization but no Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon |
| title_full | Electrons, Localization but no Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon |
| title_fullStr | Electrons, Localization but no Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon |
| title_full_unstemmed | Electrons, Localization but no Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon |
| title_short | Electrons, Localization but no Hopping: Disorder as Key for Understanding Charge Transport in Mesoporous Silicon |
| title_sort | electrons localization but no hopping disorder as key for understanding charge transport in mesoporous silicon |
| topic | disorder localization mobility edge nanostructure silicon |
| url | https://doi.org/10.1002/sstr.202400437 |
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